Thin film transistor structure, liquid crystal display device and manufacturing method

Abstract

The invention discloses a thin film transistor structure, a liquid crystal display device and a manufacturing method. The thin film transistor structure includes a first metal layer, and an insulation layer is arranged on the first metal layer. The surface of the insulation layer is provided with an active layer made of indium gallium zinc oxide materials arranged rightly above the corresponding area of the first metal layer. A second metal layer is laid on the surface of the active layer, and the second metal layer is opened a notch on the surface of the active layer. A groove is formed in the notch area of the upper surface of the active layer. Due to the fact that the thin film transistor structure, the liquid crystal display device and the manufacturing method further etch at the notch position, and etch out the groove on the surface of the active layer, impure materials of the surface in the active layer is eliminated, the material purity of the active layer is improved, and thus the characteristic efficiency of the thin film translator (TFT) is improved.

Description

technical field [0001] The invention relates to the field of liquid crystal display, and more specifically, relates to a thin film transistor structure, a liquid crystal display device and a manufacturing method. Background technique [0002] Most existing liquid crystal panels use thin film transistors (TFTs) to control the deflection of liquid crystal molecules. Such as figure 1 As shown, the traditional TFT manufacturing process is to sequentially form the gate, source and drain of the TFT on the glass substrate, and the source and drain are connected through the active layer. Usually, the material of the active layer is amorphous silicon ( p-Si, N+ / a-Si shown in the figure) material. With the development of technology, researchers began to use Indium Gallium Zinc Oxide (IGZO) as the active layer material to replace N+ / a-Si (such as figure 2 shown). Compared with amorphous silicon materials, IGZO can reduce the size of TFT, integrate simple external circuits into the...

AI Technical Summary

Problems solved by technology

Generally, the voltage value of 10 volts is defined as Ion (the current value when the TFT is turned on), negative 5 volts is Ioff (the current value when the TFT is turned off), and Ion / Ioff is greater than 10 -6 It is recognized that it can be used in TFT devices, while image 3 Ion / Ioff in is less than 10 -3 , so that the efficiency of the existing IGZO TFT characteristics is not high

Images