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A thin film transistor structure, a liquid crystal display device and a manufacturing method

A thin-film transistor and consistent technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of low efficiency of TFT characteristics of IGZO

Active Publication Date: 2016-04-27
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, the voltage value of 10 volts is defined as Ion (the current value when the TFT is turned on), negative 5 volts is Ioff (the current value when the TFT is turned off), and Ion / Ioff is greater than 10 6 It is recognized that it can be used in TFT devices, while figure 2 Ion / Ioff in is less than 10 3 , so that the efficiency of the existing IGZO TFT characteristics is not high

Method used

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  • A thin film transistor structure, a liquid crystal display device and a manufacturing method
  • A thin film transistor structure, a liquid crystal display device and a manufacturing method
  • A thin film transistor structure, a liquid crystal display device and a manufacturing method

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Embodiment Construction

[0027] A liquid crystal display device includes a thin film transistor structure. The thin film transistor structure includes a first metal layer, an insulating layer is arranged on the first metal layer, the surface of the insulating layer is covered with a second metal layer, and the second metal layer is in a corresponding area directly above the first metal layer There is a gap, the insulating layer is provided with a groove in the region corresponding to the gap, and the surface of the second metal layer, the gap and the groove is covered with an active layer made of indium gallium zinc oxide.

[0028] The inventor found that the existing IGZO TFT manufacturing process is to lay a second metal layer on the active layer made of IGZO by sputtering, etc., and then etch a gap on the active layer by chemical etching, and the first The second metal layer is divided into two to form the source metal layer and the drain metal layer of the TFT; when the second metal layer is laid ...

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Abstract

A thin-film transistor structure comprising a first metal layer (20). An insulation layer (30) is arranged on the first metal layer (20). A second metal layer (40) is covered on the surface of the insulation layer (30). A notch is provided at a corresponding area on the second metal layer (40) directly above the first metal layer (20). A groove (31) is provided at an area on the insulation layer (30) corresponding to the notch. An active layer (50) of an indium-gallium-zinc oxide material is covered on the surfaces of the second metal layer (40), of the notch, and of the groove (31).

Description

technical field [0001] The invention relates to the field of liquid crystal display, and more specifically, relates to a thin film transistor structure, a liquid crystal display device and a manufacturing method. Background technique [0002] Most existing liquid crystal panels use thin film transistors (TFTs) to control the deflection of liquid crystal molecules. The traditional TFT manufacturing process is to sequentially form the gate, source, and drain of the TFT on a glass substrate, and the source and drain are connected through an active layer. Usually, the material of the active layer is amorphous silicon. With the development of technology, researchers began to use Indium Gallium Zinc Oxide (IGZO for short) as the active layer material to replace N+ / a-Si (such as figure 1 shown). Compared with amorphous silicon materials, IGZO can reduce the size of TFT, integrate simple external circuits into the panel, make mobile devices lighter and thinner, and reduce power co...

Claims

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Application Information

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IPC IPC(8): H01L29/786G02F1/136H01L21/77
CPCH01L29/7869H01L29/42384H01L29/78636
Inventor 曾志远
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD