A preparation method of nanowire devices based on ordered arrangement of nanowires
A technology of orderly arrangement and nanowires, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of inability to fix nanowires precisely
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Embodiment 1
[0033] First, a layer of SiO is oxidized on the surface of the silicon substrate 2 thin layer, using SiO 2 The thin layer is used as a mask to prepare a slender groove structure on the surface of the silicon substrate through photolithography and etching processes, such as figure 1 shown;
[0034] Second, SiN is sequentially grown on the groove surface x Insulating film, Cr-Au metal film, and polyimide insulating film, the metal film can be used to heat nanowire devices, such as Figure 7 shown.
[0035] Then, the solution containing GeSi nanowires is dropped on the surface of the substrate, and the arrangement direction of the nanowires is consistent with the direction of the groove through dielectrophoresis, and some nanowires can be trapped in the groove, such as figure 2 shown;
[0036] Then clean the substrate to remove the nanowires outside the groove, leaving only the nanowires in the groove, such as image 3 shown;
[0037] Finally, the electrode structure is p...
Embodiment 2
[0039] First, etch a slender groove structure on the surface of the GaAs substrate, such as figure 1 shown;
[0040] Second, SiN is sequentially grown on the groove surface x Insulating film, Ti-Pt-Ni metal film, and BCB insulating film, wherein the metal film is used to prepare the gate of nanowire transistor, such as Figure 7 shown.
[0041] Then, the solution containing ZnO nanowires is dropped on the surface of the substrate, and the arrangement direction of the nanowires is consistent with the direction of the groove through the electrostatic force, and some nanowires can fall into the groove, such as figure 2 shown;
[0042] Then clean the substrate to remove the nanowires outside the groove, leaving only the nanowires in the groove, such as image 3 shown;
[0043] Finally, the electrode structure is prepared on the nanowire through photolithography and coating processes, such as Figure 4 shown.
Embodiment 3
[0045] First, etch a thin strip groove on the surface of the glass substrate, such as figure 1 shown;
[0046] Then, the solution containing AlInGaAsP nanowires is dropped on the surface of the substrate, and the arrangement direction of the nanowires is consistent with the direction of the groove through the shear force, and some nanowires can fall into the groove, such as figure 2 shown;
[0047] Then clean the substrate to remove the nanowires outside the groove, leaving only the nanowires in the groove, such as image 3 shown;
[0048] Finally, the electrode structure is prepared on the nanowire through photolithography and coating processes, such as Figure 4 shown.
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