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Protection method and circuit for simultaneous conduction of quasi-complementary voltage switching type d power amplifier

A voltage switch and protection circuit technology, which is applied in the protection field of simultaneous conduction of quasi-complementary voltage switching type D power amplifiers, can solve the problems of increasing and limiting the application of quasi-complementary voltage switching type D power amplifiers, etc., so as to prolong the service life, low cost effect

Active Publication Date: 2016-04-27
SOI MICRO CO LTD
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Problems solved by technology

[0003] The simultaneous conduction of two field effect transistors is fatal to the damage of the field effect transistor and the DC feed power supply, and the probability of simultaneous conduction of the two transistors increases with the increase of the operating frequency, which greatly limits the quasi-complementary voltage Application of Type D Power Amplifier in High Frequency (>1MHz) High Power

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  • Protection method and circuit for simultaneous conduction of quasi-complementary voltage switching type d power amplifier
  • Protection method and circuit for simultaneous conduction of quasi-complementary voltage switching type d power amplifier
  • Protection method and circuit for simultaneous conduction of quasi-complementary voltage switching type d power amplifier

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0027] The embodiments of the present invention provide a protection method for simultaneous conduction of a quasi-complementary voltage switching type D power amplifier. A choke coil is connected in series at the DC power supply end of the field effect transistor of the quasi-complementary voltage switching type D power amplifier.

[0028] In this embodiment, when the switching time (5ns) of the field effect transistor adopted is not very different from the switching period (500ns) of the field effect transistor, the influence of the input capacitance and output capacitance introduced by the packaging of the field effect transistor, Due to factors such as the detuning of the peripheral load network of the power amplifier and the influence of the load Q value, the two power amplifiers in the quasi-complementary voltage type D power amplifier are very lik...

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Abstract

The invention relates to a protective method and a circuit for simultaneous breakover of standard complementary voltage switch type D class power amplifiers. A choking coil is in series connection with a direct current power supply end of a field-effect tube of each standard complementary voltage switch type D class power amplifier. According to the protective method and the circuit for the simultaneous breakover of the standard complementary voltage switch type D class power amplifiers, on one hand, damage to the field-effect tubes and a direct current power source due to an instant large current due to the simultaneous breakover of the two field-effect tubes can be effectively restrained, and on the other hand, proper inductive reactance is in series connection between the direct current and the two field-effect tubes so that effect of 2MHz interference signals coming from the two field-effect tubes to the direct current power source is effectively prevented.

Description

technical field [0001] The invention relates to the technical field of power amplifying circuit protection, in particular to a protection method and circuit for simultaneous conduction of quasi-complementary voltage switching type D power amplifiers. Background technique [0002] Since the quantitative theoretical analysis of the quasi-complementary voltage switching type D power amplifier circuit always takes the switching time of the two field effect transistors as zero as the precondition, but in the actual quasi-complementary voltage switching type D power amplifier circuit The switching time of the FET is impossible to be instantaneous, and it must take a certain amount of time to complete. Since the switching of the two field effect transistors takes a certain amount of time, there is a possibility that the two field effect transistors are turned on at the same time at a certain moment, and the existence of this possibility will increase with the increase of the switch...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/52
Inventor 秦威李勇滔李英杰赵章琰夏洋
Owner SOI MICRO CO LTD