Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon compound, condensation product, resist compostion and pattern formation method

A technology of silicon compounds and carbon atoms, which is applied in the field of new silicon compounds and can solve unestablished problems

Inactive Publication Date: 2013-06-05
CENT GLASS CO LTD
View PDF15 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In any case, methods for efficiently introducing photoacid-generating groups into silicone resins that are excellent in heat resistance, transparency, adhesion, and oxygen plasma resistance have not yet been established.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon compound, condensation product, resist compostion and pattern formation method
  • Silicon compound, condensation product, resist compostion and pattern formation method
  • Silicon compound, condensation product, resist compostion and pattern formation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0329] Embodiment 1 (synthesis of condensate (1))

[0330]Take a total of 30g of alkoxysilane, 150g of isopropanol and water 110g as a solvent, and 0.10g of acetic acid as a hydrolysis catalyst in a three-necked flask with stirring blades and a reflux device. The feeding ratio is as follows: the aforementioned alkoxysilane (1) is 5 mol%, tetraethoxysilane (hereinafter referred to as TEO S) is 10 mol%, PhSi(OEt) 3 is 55 mol% and Me 2 Si(OEt) 2 is 30 mol%.

[0331] Next, these reaction systems in the three-necked flask were heated to 90° C. to perform hydrolysis and condensation reactions. After 3 hours, the reaction solution was returned to room temperature, and 200ml of isopropyl ether and 200ml of water were added to the three-necked flask. After stirring, the upper layer of the reaction solution that had been separated into two layers was recovered, and 200ml was used for washing three times. Next, after dehydration was performed by adding magnesium sulfate, the solvent ...

Embodiment 2~15

[0332] Embodiment 2~15 (synthesis of condensate (2)~(15))

[0333] In the same steps as in Example 1, alkoxysilanes (1)-(5) and other alkoxysilanes containing hydrolyzed groups and photoacid generating groups were hydrolyzed and condensed to obtain condensates (2)-(15 ). Table 1 shows the measurement results of the charging ratio (molar ratio) and the weight average molecular weight (Mw) of the alkoxysilanes used.

[0334] [Table 1]

[0335]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to View More

Abstract

A silicon compound according to the present invention is represented by the general formula (1). This silicon compound can be easily synthesized by using a hydrolysable silicon compound such as alkoxysilane and has, in its molecule, a hydrolysable group e.g. alkoxy group and a photoacid generating group capable of being dissociated to generate an acid by irradiation with a high-energy ray. R1nAmSiB4-(n+m)(1) where R1 is each independently a hydrogen atom, a C1-C20 straight or C3-C20 branched or cyclic hydrocarbon group; a carbon atom of the hydrocarbon group may be replaced by an oxygen atom; and the hydrocarbon group may contain a fluorine atom; A is an acid decomposable group; B is a hydrolysable group; n is an integer of 0 to 2; m is an integer of 1 to 3; and n+m is an integer of 1 to 3.

Description

technical field [0001] The present invention relates to a novel silicon compound, a condensate obtained by hydrolyzing and condensing the silicon compound, a resist composition obtained from the condensate, and a pattern forming method using the same. Background technique [0002] With the high integration of LSIs, the miniaturization of resist patterns in photolithography is progressing. In addition, photolithography refers to exposing the substrate surface coated with a photosensitive substance (photoresist, hereinafter sometimes simply referred to as resist) into a desired pattern through a photomask or a reticle. The difference in the solubility of the exposed part and the unexposed part of the resist to the developer is used to form a resist pattern based on the resist (hereinafter sometimes referred to as a pattern) on the substrate. [0003] In the background of the miniaturization of patterns, there is a shortening of the wavelength of the exposure light source. For...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F7/18C08G77/04G03F7/075G03F7/00
CPCG03F7/20G03F7/0045C07F7/1836G03F7/0755G03F7/0046G03F7/0757C07F7/1804C07F7/18C07D211/76C07D491/04
Inventor 山中一广小川毅
Owner CENT GLASS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com