The invention provides a
transistor, a preparation method thereof, a display substrate and a
display device. The
transistor comprises a substrate structure, a gate
electrode, a source
electrode, a drain
electrode and an
active layer, wherein the gate electrode, the source electrode, the drain electrode and the
active layer are arranged on the substrate structure. The gate electrode, the source electrode and the drain electrode are all located at one side, deviating from the substrate structure, of the
active layer. The active layer comprises a first region corresponding to an
orthographic projection region of the gate electrode on the substrate structure and a second region located outside the
orthographic projection region, wherein the second region is made of a conductive
semiconductor material, and the surface, in contact with the first region, of the substrate structure and the surface, in contact with the second region, of the substrate structure are not in the same plane. The surface, in contact with the first region, of the substrate structure and the surface, in contact with the second region, of the substrate structure are not in the same plane, so the
transistor enables the
height difference to be formed between the first region and the second region of the active layer, and the
diffusion path of an active layer material from the second region to the first region in the conductor formation is lengthened, and the
diffusion of the active layer material needs greater energy, thereby improving the poor
threshold voltage uniformity of the transistor caused by the short-channel effect.