In situ elliptical polarization measurement device

Abstract

An in situ elliptical polarization measurement device comprises a sealing cover (100); an incidence hole (106) and a reflection hole (107) which respectively allow incidence and reflection of a polarized light are arranged on the sealing cover; an incidence light penetration mouth (108) and a reflection light penetration mouth (109) which are sealed are respectively arranged at outer openings of the incidence hole and the reflection hole; while a thin film reaction cavity is maintained closed, a thin film thickness can be measured at any moment in an atomic layer deposition process; an opening within a cavity of an optical path hole, and air inlet and outlet mouths of a reaction cavity are staggered, so that an air flow in the reaction cavity is not easy to enter the optical path hole and a reagent is prevented from depositing on an inner wall of the optical path hole; the complex regular cleaning is not needed; and the whole measuring device is simple and compact in structure, and easy to use.

Description

technical field [0001] The invention relates to a device and a measuring method for measuring the thickness of an atomic layer deposition film, in particular to a device for measuring the thickness of an atomic layer deposition film in situ by an ellipsometer. Background technique [0002] With the continuous development of semiconductor integrated circuits, the chip size is continuously reduced and the performance is continuously improved, and there is an urgent need for thin films with high precision and nanometer thickness. Atomic layer deposition technology has gradually replaced the traditional chemical vapor deposition and physical vapor deposition methods due to its nano-controllable film thickness and good uniformity, and is widely used in micro-nano electronic devices, solar cells and other fields. The technical principle of atomic layer deposition is that a precursor is introduced into a vacuum chamber and chemically adsorbed on the surface of the substrate (usuall...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the complex structure, inconvenient operation, inability to measure film thickness during a deposition cycle, and easy influence on the environment of the reaction chamber in the in-situ ellipsometry device with external pipes and isolation devices in the prior art. and other defects and deficiencies, an in-situ ellipsometric measurement device is provided, and an optical path hole for incident and reflection of polarized light is set on the sealing cover of the film reaction chamber, which can measure the thickness of the film at any time during the entire deposition process, and the cavity of the optical path hole The inner opening and the gas inlet and outlet of the reaction chamber are staggered, the gas flow in the reaction chamber is not easy to enter the optical path hole, so as to avoid the deposition of reactants on the inner wall of the optical path hole, and there is no need for complicated and regular cleaning. The structure of the whole measuring device is simple and compact. convenient

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