Manufacturing method for back contact crystalline silicon solar cell

Abstract

The invention discloses a manufacturing method for a back contact crystalline silicon solar cell. The manufacturing method comprises the following steps of: performing texturing and diffusion on the surface of a semiconductor substrate; reserving through holes in the semiconductor substrate after the diffusion; etching the semiconductor substrate with the through holes; removing a doped glass layer from the etched semiconductor substrate; coating a film on the illuminated surface of the semiconductor substrate from which the doped glass layer is removed; and preparing electrodes and a back surface field on the film-coated semiconductor substrate to obtain the back contact crystalline silicon solar cell. According to the method, the surface of the semiconductor substrate is diffused, and the through holes are reserved in the semiconductor substrate after the diffusion, so that the inner walls of the through holes cannot be diffused, namely emitter junctions in the through holes are avoided. Compared with the prior art, the method has the advantages of eliminating a laser isolation procedure, reducing the electric leakage risks of the cell and greatly lowering the fragmentation rate of the cell. In addition, the laser isolation procedure is eliminated, so that a process is simple, equipment cost is reduced, and industrial production is facilitated.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a method for manufacturing back-contact crystalline silicon solar cells. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. At present, more than 80% of solar cells are made of crystalline silicon materials. Therefore, the preparation of high-efficiency crystalline silicon solar cells is of great significance for large-scale utilization of solar power generation. The main grid line, the positive electrode and the negative electrode are all located on the backlight side of the cell, which greatly reduces the shading rate of the light-receivi...

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Problems solved by technology

[0013] In the existing manufacturing process, in the diffusion junction step, a conductive layer that short-circuits the P-N junction will be formed between the backlight surface of the solar cell and the conductive hole, which greatly reduces the parallel resistance of the cell and is prone to leakage, so The conductive layer between the P-N junction needs to be removed by laser isolation step

However, the use of laser isolation may cause new leakage paths in solar cells, resulting in a decrease in the performance of the cells. In addition, the laser damages the cells themselves, and debris may appear during the laser isolation process, which increases the production of cells. cost

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