Forming method of metal oxide semiconductor (MOS) device and MOS device formed through method

Abstract

The invention provides a forming method of a metal oxide semiconductor (MOS) device. The forming method comprises first providing a semiconductor substrate at least comprising three regions, enabling a first region to be used for forming a gate region, enabling a second region and a third region which are adjacent to the first region to be respectively used for forming a source region and a drain region; utilizing an epitaxial method to the semiconductor substrate of the first region to extend outwards to grow an epitaxial layer; then utilizing an isotropic etching method to etch the epitaxial layer to form a channel region; then utilizing the epitaxial method to grow silicon-germanium in the second region and the third region, and respectively forming a silicon-germanium source region structure and a drain region structure; and then doping the silicon-germanium source region structure and the drain region structure. The invention further provides the MOS device formed by utilizing the method. Due to the technical scheme, damage to a silicon substrate caused by etching of the source region and the drain region in a conventional method is avoided, the goal of reducing defects is achieved, and electric leakage of the formed MOS device in the using process cannot occur easily.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a MOS device and a MOS device formed by the method. Background technique [0002] MOS devices are one of the basic components in integrated circuits. In recent years, silicon-germanium has been used as the source and drain to improve the performance of MOS devices in the semiconductor industry. It is known that the performance of PMOS transistors can be improved when uniaxial compressive strain is applied directly to the channel region of the transistor from the silicon-germanium source and drain regions. The performance of NMOS transistors can be improved when uniaxial tensile strain is applied to the channel region. [0003] Figure 1 to Figure 3 Shown is a schematic view of each structure formed in the manufacturing steps of the MOS device using silicon-germanium as the source and drain in the prior art. First, refer to figure 1 , shows a cr...

AI Technical Summary

Problems solved by technology

[0006] The problem to be solved by the present invention is to propose a new method for forming MOS devices, which solves the problem that the existing MOS devices have defects in the source and drain during the production process, and leakage occurs during use.

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