Organic molecule memory, and organic molecule used in organic molecule memory

An organic molecule and memory technology, applied in the field of organic molecular memory and organic molecules used in organic molecular memory, to achieve the effect of excellent retention characteristics

Active Publication Date: 2013-06-05
키오시아가부시키가이샤
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, it is expected that as long as the infrastructure of existing silicon (Si) memory devices is maintained, scaling will soon reach its limit and increases in memory chip density and capacity will cease

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic molecule memory, and organic molecule used in organic molecule memory
  • Organic molecule memory, and organic molecule used in organic molecule memory
  • Organic molecule memory, and organic molecule used in organic molecule memory

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0051] The organic molecular memory of this embodiment includes: a first conduction layer; a second conduction layer; and an organic molecular layer interposed between the first conduction layer and the second conduction layer and containing Molecular skeletons and organic molecules of molecular groups satisfying the following conditions (I) and (II) at the same time, wherein the molecular skeletons have a π-electron system extending along the molecular axis:

[0052] (I) In this molecular group, one of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is delocalized along the molecular axis, and the other is localized relative to the molecular axis.

[0053] (II) In this molecular group, the energy level value of the highest occupied molecular orbital (HOMO) is -5.75 eV or higher.

[0054] According to this embodiment, one of the HOMO and LUMO of the organic molecules contained in the organic molecular layer is localized and the ...

no. 2 approach

[0170] The organic molecular memory of this embodiment is an organic molecular memory in which a transistor and a memory cell of an organic molecular layer are contained. This embodiment is basically the same as the first embodiment except for the memory cell structure. Therefore, descriptions of the same aspects as those of the first embodiment will not be repeated here.

[0171] Figure 20 is a schematic cross-sectional view of the memory cell portion of the organic molecular memory of this embodiment.

[0172] The organic molecular memory of this embodiment is a molecular memory in which a transistor and a memory cell of a variable resistance type organic molecular layer are included. Such as Figure 20 As shown, a selection transistor 76 including a gate insulating film 72 and a gate electrode 74 is formed on a substrate 70 . In the substrate 70, a first source / drain region 80 and a second source / drain region 82 are formed with the gate electrode 74 interposed therebet...

no. 3 approach

[0186] The organic molecular memory of this embodiment is an organic molecular memory having organic molecules including donor-type molecular units. Otherwise, this embodiment is substantially the same as the first and second embodiments. Therefore, the same aspects as those of the first and second embodiments are not repeated here.

[0187] Here, a molecular unit having electron-donating properties is referred to as a "donor-type molecular unit". The donor type molecular unit effectively raises the HOMO energy level of the organic molecule of this embodiment, and can change the localization orbital from LUMO to HOMO. In order for the donor-type molecule to achieve this effect, the donor-type molecule must have stronger electron-donating properties than the phenyl ring which is the basic structural unit of the organic molecule of this embodiment. At least it is required that the HOMO energy level of the hydrogen-terminated portion of the donor-type molecular unit exceeds the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

An organic molecule memory of an embodiment comprises a first connective layer; a second conductive layer; and an organic molecule layer which is arranged between the first connective layer and the second conductive layer and contains organic molecules selected from a module group with a molecular skeleton and meeting the conditions (I) and (II) in a molecule system, wherein the molecular skeleton has a pi-electronic system extending along a molecular axis: (I) one of the Highest Occupied Molecular Orbital (HOMO) and the Lowest Unoccupied Molecular Orbital (LUMO) is delocalized along the molecular axis, and the other one is localized relative to the molecular axis; and (II) the energy level of the Highest Occupied Molecular Orbital (HOMO) is -5.75eV or higher.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from Japanese Patent Application No. 2011-263099 filed on November 30, 2011, the entire contents of which are incorporated herein by reference. technical field [0003] Embodiments described herein relate generally to organic molecular memories and organic molecules for use in organic molecular memories. Background technique [0004] In recent years, the density of memory elements and logic elements has become higher through scaling. Integrated circuits have a higher degree of integration and thus higher capacity. This tendency is particularly evident in memory circuits. [0005] However, it is expected that as long as the infrastructure of existing silicon (Si) memory devices is maintained, scaling will soon reach its limit and increases in memory chip density and capacity will cease. [0006] To overcome this limit, organic molecular memory, which is a new type of m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/28C07C323/31C07D495/04C07D333/20C07D333/32C07D519/00C07D339/06
CPCH01L51/005G11C13/0014H01L45/14H01L51/0591B82Y10/00G11C13/0016G11C2213/53G11C2213/77H10K85/622H10K85/624H10K85/623H10K85/655H10K85/6574H10K30/671H10K10/50H10N70/881
Inventor 多田宰西沢秀之
Owner 키오시아가부시키가이샤
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap