The invention, which belongs to the technical field of
organic electronics and information, discloses an organic field-effect
transistor memory based on nano lattice molecules and a preparation methodthereof. The memory comprises source / drain electrodes, an
organic semiconductor layer, a nano lattice molecular storage layer, a gate insulating layer, a substrate, and a gate
electrode formed on thesubstrate, wherein the parts are arranged from top to bottom successively. According to the invention, the provided memory being a typical charge
trapping / releasing mechanism has advantages of high charge maintaining stability, high tolerance, large storage window and large storage density, high flexibility, large area, and low process cost by being compared with the
polymer electret memory and floating gate type memory. According to the invention, the memory is prepared by using the simple process; and the storage capacity, switching speed and stability of the memory are greatly improved. Moreover, the device preparation cost is lowered. Therefore, the memory is convenient to popularize and apply.