The present disclosure relates to a
molecular memory device comprising a
molecular memory unit that includes a first conducting layer, a second conducting layer, and an
organic layer interposed between the two conducting
layers. The
organic layer comprises a compound selected from Formula I, Formula II, their salts, stereoisomers, solvates, or combinations thereof. These compounds exhibit multiple
redox states and
voltage-dependent geometric isomerism, enabling enhanced electronic switching behavior and
multilevel data storage capabilities. The organic materials are sensitive to external stimuli such as
voltage,
light irradiation, and pH variations, allowing multifunctional integration of sensing, memory, and computing functionalities within a single device architecture. This present disclosure provides a scalable, energy-efficient, and cost-effective platform for advanced memory and neuromorphic computing applications.