Organic field-effect transistor memory based on nano lattice molecules and preparation method thereof

A nano-lattice and molecular storage technology, applied in the fields of semiconductor/solid-state device manufacturing, organic chemistry, electric solid-state devices, etc., can solve the problems of difficult to achieve multi-level storage, poor device repeatability, poor data stability, etc., and achieve improved charge retention. Ability and Tolerance Ability, Reduced Manufacturing Cost, Low Cost Effect

Active Publication Date: 2019-03-26
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, organic memory still faces the following challenges: (1) high operating voltage (>100V), slow response speed (>1s), low storage density (difficult to achieve multi-level storage), poor data stability (maintenance time 5 s); (2) The devic...

Method used

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  • Organic field-effect transistor memory based on nano lattice molecules and preparation method thereof
  • Organic field-effect transistor memory based on nano lattice molecules and preparation method thereof
  • Organic field-effect transistor memory based on nano lattice molecules and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] When X is C; Y is S; R is a linear octyloxy group, G1, G2, G3, and G4 are all hydrogen, and the lattice molecular structures are as follows:

[0057]

[0058] The synthetic route is as follows:

[0059]

[0060] The specific preparation method is as follows: dithiophene is obtained by coupling thiophene monomer through Pd / C catalysis, monobromofluorenone is obtained by Grignard reaction and Friedel-Crafts reaction to obtain compound 3, and the boronic acid of compound 3 and 2 in Pd(PPh 3 ) 4 Catalyst, alkali solution selection K 2 CO 3 Suzuki coupling under / KF conditions can efficiently obtain monosubstituted L-shaped precursors. The L-shaped precursor is in Et through its own dual active site tertiary alcohol group and the α position of thiophene. 2 O·BF 3 The catalyzed Friedel–Crafts reaction is closed to obtain nano-lattice molecules.

[0061] Compound 1: 2-bromothiophene (5.0 g, 30.6 mmol), 10% Pd / C (1.6 g, 1.5 mmol) was added 80 mL of anhydrous THF, protected by nitrogen...

Embodiment 2

[0067] The electrochemical determination of nano-grid molecular materials was measured in the CHI 660D electrochemical workstation of Shanghai Chenhua Instrument Company. The three-electrode system Pt electrode was used as the working electrode, the platinum wire was the auxiliary electrode, and the calomel electrode was the reference electrode. . Use 0.1M tetrabutyl fluoroborate (Bu 4 NPF 6 ) The acetonitrile solution is the electrolyte solution, ferrocene is used as the internal standard (0.40V), the electrolyte solution is blown into nitrogen for 20 minutes to remove oxygen, and the polymer chloroform solution is dripped on the working Pt electrode to form a film. Scanning during testing The speed is 50mV / s. According to the oxidation peak and reduction peak generated during the scanning process, the HOMO energy level and LUMO energy level can be calculated by analyzing the initial oxidation / reduction potential of the oxidation peak or reduction peak. Such as Figure 15 As ...

Embodiment 3

[0069] Thermogravimetric analysis (TGA) was performed on Shimadzu DTG-60H thermogravimetric analyzer, heating scanning speed was 10℃ / min and nitrogen flow rate was 20cm 3 / min. Differential scanning calorimetry (DSC) was performed on a Shimadzu DSC-60A tester. The sample was first heated at a rate of 10°C / min to a state where the decomposition temperature of the sample was ten degrees lower, and then, under liquid nitrogen The temperature is lowered back to the starting temperature, and the heating and heating scan is performed at a rate of 10°C / min for the second time. From the TGA experiment, the temperature at 5% weight loss (T d ) Are 458.05°C respectively. DSC experiment showed no obvious glass transition temperature.

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Abstract

The invention, which belongs to the technical field of organic electronics and information, discloses an organic field-effect transistor memory based on nano lattice molecules and a preparation methodthereof. The memory comprises source/drain electrodes, an organic semiconductor layer, a nano lattice molecular storage layer, a gate insulating layer, a substrate, and a gate electrode formed on thesubstrate, wherein the parts are arranged from top to bottom successively. According to the invention, the provided memory being a typical charge trapping/releasing mechanism has advantages of high charge maintaining stability, high tolerance, large storage window and large storage density, high flexibility, large area, and low process cost by being compared with the polymer electret memory and floating gate type memory. According to the invention, the memory is prepared by using the simple process; and the storage capacity, switching speed and stability of the memory are greatly improved. Moreover, the device preparation cost is lowered. Therefore, the memory is convenient to popularize and apply.

Description

Technical field [0001] The invention belongs to the field of organic electronics and information technology, and specifically relates to an organic field effect transistor memory based on nano lattice molecules and a preparation method thereof, and can be applied to the fields of semiconductor storage technology, computers, artificial intelligence and the like. Background technique [0002] In the era of mobile Internet and big data, human beings will enter the era of consciousness of intelligent machine services. Storage as the home of data is an indispensable element of information technology and artificial intelligence in the future. The rapid development of information technology requires future memory to be faster, smaller in functional size, higher in storage density, simpler in manufacturing process, flexible, thinner and more portable. The non-volatile memory based on the organic field effect transistor (OFET) structure not only has the characteristics of fast storage spe...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/30H01L51/40C07D495/22
CPCC07D495/22H10K71/12H10K85/00H10K10/46
Inventor 解令海余洋卞临沂仪明东黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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