Color imaging method based on photosensitive composite medium grid metal oxide semiconductor field effect transistor (MOSFET) detector

Abstract

Then invention provides a color imaging method based on a photosensitive composite medium grid metal oxide semiconductor field effect transistor (MOSFET) detector. According to the color imaging method, different voltage pulses are put on grid electrodes, and the MOSFET works in a deep-exhausting state. According to principles that different grid voltage causes different depths of an exhausting area and lights of different wave lengths has different penetration depth in silicon, red photon, green photon and blue photon in incident light are separated, collected and detected respectively, the three primary colors, namely red, green and blue, are detected in a same pixel to realize color imaging. The color imaging method includes the steps of: imposing a positive pulse Vb on the grid electrodes, forming an exhausting layer of certain depth on a P-type silicon semiconductor to absorb blue light photon, and changing the pulse voltage of the grid electrodes in order to absorb red light photon and blue light photon. The color imaging method has the advantages that color blending phenomenon in traditional color imaging method is avoided, quantum efficiency is improved, technological process is simple, cost is low, and scalability of pixels is good.

Description

technical field [0001] The invention relates to a color imaging method in an imaging detector, in particular to a device structure, a working mechanism and an operation method for realizing the detection of three primary colors (red, green and blue) in the same unit pixel. Background technique [0002] Color imaging methods have extremely important applications in defense, medical, surveillance and civil fields. At present, the main color imaging methods can be divided into two categories: 1. According to the principle that different wavelengths of light can penetrate different depths in semiconductor materials, the structure is designed for detection; 2. A so-called Bayer color filter array is used. The structure (Bayer color filter array) separates different wavelengths of light for detection. [0003] The first type of technology includes non-imaging devices, which only use different wavelengths of light to penetrate different depths in semiconductor materials to detect ...

AI Technical Summary

Problems solved by technology

In this way, the problem of color confusion will be encountered in the process of color restoration, which affects the quality of imaging.

At the same time, as the unit pixel area continues to shrink, the production of color filters will become more and more difficult

Moreover, since the unit pixel area of ​​CCD and CMOS-APS is difficult to continue to shrink, their spatial color sampling frequency cannot be continuously improved, which also aggravates the phenomenon of color confusion.

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