Color imaging method based on photosensitive composite dielectric gate mosfet detector
A composite medium, color imaging technology, used in picture signal generators, radiation control devices, etc., can solve the problems of color confusion, aggravating color confusion, and affecting imaging quality.
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[0050] Incident photons penetrate to different depths in silicon with different wavelengths, figure 1 The penetration depth of light in silicon is shown as a function of wavelength. As shown in the figure, blue light (wavelength of 400-490 nanometers) is mainly absorbed in silicon at a depth of 0.2-0, 5 microns, and green light (wavelength of 490-575 nanometers) is mainly absorbed at 0.5-1.5 microns in silicon. Absorption, red light (wavelength 575 to 700 nanometers) is mainly absorbed in silicon at 1.5 to 3 microns.
[0051]When the voltage applied to the gate of the MOSFET is a pulse voltage, the MOSFET will work in a deep depletion state. At this time, the depletion layer at the interface between the underlying dielectric layer and the P-type silicon substrate will vary with the voltage applied to the gate. Different, the relationship between the depth of the depletion layer and the voltage applied to the gate is as follows:
[0052] W = ...
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