LED epitaxial wafer with n-type insertion layer of trapezoid structure and growth method thereof

Abstract

The invention discloses an LED epitaxial wafer with an N-type insertion layer of a trapezoidal structure and a growth method thereof. The structure of the epitaxial wafer is substrate, low-temperature GaN buffer layer, GaN undoped layer, first N-type GaN layer, N-type AlGaN insertion layer, second N-type GaN layer, and multiple quantum well layers from bottom to top. , a low-temperature P-type GaN layer, a P-type AlGaN layer, a high-temperature P-type GaN layer, and a P-type contact layer; the N-type AlGaN insertion layer has a trapezoidal structure. Specifically, an N-type AlGaN insertion layer composed of N-type AlGaN layers a, b, and c is grown on the first N-type GaN layer, and the molar composition content of Ga in the N-type AlGaN layers a, b, and c remains constant. The molar component content of Al increases gradually, remains unchanged, and decreases gradually. The present invention inserts an N-type AlGaN layer with a trapezoidal structure into the N-type GaN layer, on the one hand effectively reducing the dislocation density in the quantum well region, and on the other hand reducing the influence on the longitudinal migration of electrons due to the introduction of the N-type AlGaN layer, thereby Improving the luminous efficiency of GaN-based LEDs.

Description

technical field [0001] The invention belongs to the technical field of preparation of group III nitride materials, in particular to an LED epitaxial wafer with an N-type insertion layer of a trapezoidal structure and a growth method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. Group III nitrides represented by gallium nitride are wide-bandgap semiconductor materials with direct bandgap, which have excellent properties such as high electron drift saturation velocity, good thermal conductivity, strong chemical bond, high temperature resistance and corrosion resistance. Its ternary alloy indium gallium nitride (InGaN) band gap is continuously adjustable from 0.7eV indium nitride (InN) to 3.4eV gallium nitride (GaN), and the emission wavelength covers the entire regio...

AI Technical Summary

Problems solved by technology

Although the large polarization difference at the heterointerface between the N-type AlGaN layer and the N-type GaN layer will induce a high concentration of two-dimensional electron gas and promote the lateral movement of electrons, the longitudinal confinement effect of the two-dimensional electron gas on carriers It is also enhanced, so that electrons gather at the heterointerface, resulting in a reduction in the number of electrons migrating to the quantum well region, so the two-dimensional electron gas structure is a double-edged sword

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