The invention discloses an LED epitaxial wafer with an N-type insertion layer of a trapezoidal structure and a growth method thereof. The structure of the epitaxial wafer is substrate, low-temperature GaN buffer layer, GaN undoped layer, first N-type GaN layer, N-type AlGaN insertion layer, second N-type GaN layer, and multiple quantum well layers from bottom to top. , a low-temperature P-type GaN layer, a P-type AlGaN layer, a high-temperature P-type GaN layer, and a P-type contact layer; the N-type AlGaN insertion layer has a trapezoidal structure. Specifically, an N-type AlGaN insertion layer composed of N-type AlGaN layers a, b, and c is grown on the first N-type GaN layer, and the molar composition content of Ga in the N-type AlGaN layers a, b, and c remains constant. The molar component content of Al increases gradually, remains unchanged, and decreases gradually. The present invention inserts an N-type AlGaN layer with a trapezoidal structure into the N-type GaN layer, on the one hand effectively reducing the dislocation density in the quantum well region, and on the other hand reducing the influence on the longitudinal migration of electrons due to the introduction of the N-type AlGaN layer, thereby Improving the luminous efficiency of GaN-based LEDs.