The invention discloses a
light emitting diode (LED) epitaxial
wafer with an N type
insertion layer with a trapezoidal structure and a growth method thereof. The LED epitaxial
wafer comprises a substrate, a low-temperature GaN buffer layer, a GaN non-
doping layer, a first N type GaN layer, an N type AlGaN
insertion layer, a second N type GaN layer, a multi-
quantum well layer, a low-temperature P type GaN layer, a P type AlGaN layer, a high-temperature P type GaN layer and a P type
contact layer sequentially from bottom to top, wherein the N type AlGaN
insertion layer has a trapezoidal structure. According to the LED epitaxial
wafer, the N type AlGaN insertion layer which consists of N type AlGaN
layers (a, b and c) is grown on the first N type GaN layer; and the content of mole components of Ga in the N type AlGaN
layers (a, b and c) is constant, and the content of mole components of Al is increased gradually, constant and reduced gradually. According to the LED epitaxial wafer, the N type AlGaN layer with the trapezoidal structure is inserted into the N type GaN
layers, so that the
dislocation density of a
quantum well area is reduced effectively, the influence on the longitudinal migration of electrons due to the introduction of the N type AlGaN layer is reduced, and the luminous efficiency of
gallium nitride-base LEDs is improved.