Light emitting diode (LED) epitaxial wafer with N type insertion layer with trapezoidal structure and growth method thereof

Abstract

The invention discloses a light emitting diode (LED) epitaxial wafer with an N type insertion layer with a trapezoidal structure and a growth method thereof. The LED epitaxial wafer comprises a substrate, a low-temperature GaN buffer layer, a GaN non-doping layer, a first N type GaN layer, an N type AlGaN insertion layer, a second N type GaN layer, a multi-quantum well layer, a low-temperature P type GaN layer, a P type AlGaN layer, a high-temperature P type GaN layer and a P type contact layer sequentially from bottom to top, wherein the N type AlGaN insertion layer has a trapezoidal structure. According to the LED epitaxial wafer, the N type AlGaN insertion layer which consists of N type AlGaN layers (a, b and c) is grown on the first N type GaN layer; and the content of mole components of Ga in the N type AlGaN layers (a, b and c) is constant, and the content of mole components of Al is increased gradually, constant and reduced gradually. According to the LED epitaxial wafer, the N type AlGaN layer with the trapezoidal structure is inserted into the N type GaN layers, so that the dislocation density of a quantum well area is reduced effectively, the influence on the longitudinal migration of electrons due to the introduction of the N type AlGaN layer is reduced, and the luminous efficiency of gallium nitride-base LEDs is improved.

Description

technical field [0001] The invention belongs to the technical field of preparation of group III nitride materials, in particular to an LED epitaxial wafer with an N-type insertion layer of a trapezoidal structure and a growth method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. Group III nitrides represented by gallium nitride are wide-bandgap semiconductor materials with direct bandgap, which have excellent properties such as high electron drift saturation velocity, good thermal conductivity, strong chemical bond, high temperature resistance and corrosion resistance. Its ternary alloy indium gallium nitride (InGaN) band gap is continuously adjustable from 0.7eV indium nitride (InN) to 3.4eV gallium nitride (GaN), and the emission wavelength covers the entire regio...

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Problems solved by technology

Although the large polarization difference at the heterointerface between the N-type AlGaN layer and the N-type GaN layer will induce a high concentration of two-dimensional electron gas and promote the lateral movement of electrons, the longitudinal confinement effect of the two-dimensional electron gas on carriers It is also enhanced, so that electrons gather at the heterointerface, resulting in a reduction in the number of electrons migrating to the quantum well region, so the two-dimensional electron gas structure is a double-edged sword

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