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A gallium nitride-based LED epitaxial structure and preparation method thereof

An epitaxial structure, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency, low yield, poor photoelectric performance, etc., to improve luminous efficiency, improve yield, improve Effect of crystallization quality

Active Publication Date: 2016-03-30
SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problems of low luminous efficiency, poor photoelectric performance and low yield rate of the existing GaN-based LED epitaxial structure, the present invention provides a gallium nitride-based LED epitaxial structure and a preparation method thereof

Method used

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  • A gallium nitride-based LED epitaxial structure and preparation method thereof
  • A gallium nitride-based LED epitaxial structure and preparation method thereof

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Embodiment 1

[0019] A GaN-based LED epitaxial structure, including a sapphire substrate, a low-temperature GaN buffer layer, an undoped GaN layer, an n-type doped GaN layer, a superlattice layer, a multi-quantum well light-emitting layer, a p-type AlGaN layer, and a p-type AlGaN layer. Type GaN contact layer; wherein, the low-temperature GaN buffer layer is grown on the upper surface of the sapphire substrate; the undoped GaN layer is grown on the upper surface of the low-temperature GaN buffer layer; the n-type doped GaN layer is grown on the undoped GaN layer surface; the superlattice layer is grown on the upper surface of the n-type doped GaN layer; the multi-quantum well light-emitting layer is grown on the upper surface of the superlattice layer; the p-type AlGaN layer is grown on the upper surface of the multi-quantum well light-emitting layer; the p-type A GaN contact layer is grown on the upper surface of the p-type AlGaN layer.

[0020] In this example, if figure 1 As shown, the ...

Embodiment 2

[0035] A GaN-based LED epitaxial structure, including a sapphire substrate, a low-temperature GaN buffer layer, an undoped GaN layer, an n-type doped GaN layer, a superlattice layer, a multi-quantum well light-emitting layer, a p-type AlGaN layer, and a p-type AlGaN layer. Type GaN contact layer; wherein, the low-temperature GaN buffer layer is grown on the upper surface of the sapphire substrate; the undoped GaN layer is grown on the upper surface of the low-temperature GaN buffer layer; the n-type doped GaN layer is grown on the undoped GaN layer surface; the superlattice layer is grown on the upper surface of the n-type doped GaN layer; the multi-quantum well light-emitting layer is grown on the upper surface of the superlattice layer; the p-type AlGaN layer is grown on the upper surface of the multi-quantum well light-emitting layer; the p-type A GaN contact layer is grown on the upper surface of the p-type AlGaN layer.

[0036] In this example, if figure 2 As shown, the...

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Abstract

The invention relates to a GaN-based LED epitaxial structure, in particular to a GaN-based LED epitaxial structure and a preparation method thereof. The invention solves the problems of low luminous efficiency, poor photoelectric performance and low yield rate of the existing GaN-based LED epitaxial structure. A gallium nitride-based LED epitaxial structure includes a sapphire substrate, a low-temperature GaN buffer layer, an undoped GaN layer, an n-type doped GaN layer, a superlattice layer, a multi-quantum well light-emitting layer, a p-type AlGaN layer, a p-type GaN contact layer; wherein, the low-temperature GaN buffer layer is grown on the upper surface of the sapphire substrate; the undoped GaN layer is grown on the upper surface of the low-temperature GaN buffer layer; the n-type doped GaN layer is grown on the upper surface of the undoped GaN layer The superlattice layer is grown on the upper surface of the n-type doped GaN layer; the multi-quantum well light-emitting layer is grown on the upper surface of the superlattice layer. The invention is suitable for manufacturing semiconductor light emitting devices.

Description

technical field [0001] The invention relates to a GaN-based LED epitaxial structure, in particular to a GaN-based LED epitaxial structure and a preparation method thereof. Background technique [0002] GaN-based LED epitaxial structures are widely used in the manufacture of various semiconductor light emitting devices. As the core of semiconductor light-emitting devices, the performance of GaN-based LED epitaxial structures is directly related to the performance of semiconductor light-emitting devices. Under the existing technical conditions, GaN-based LED epitaxial structures are prepared by MOCVD (MetalOrganicChemicalVaporDeposition, metal organic compound chemical vapor deposition) method. However, practice has shown that the lattice mismatch between the low-temperature GaN buffer layer of the existing GaN-based LED epitaxial structure and the sapphire substrate is relatively high (usually up to 16%), resulting in a high dislocation density of the low-temperature GaN buf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/007H01L33/04H01L33/12
Inventor 梁建韩蕊蕊吴文质马淑芳杨鑫田海军许并社
Owner SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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