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Dummy Gates for High Voltage Transistor Devices

A dummy gate structure and device technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as unsatisfactory solutions

Active Publication Date: 2017-09-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Thus, while existing methods of fabricating high-voltage transistors are generally adequate for their intended purpose, these methods are not entirely satisfactory in all respects.

Method used

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  • Dummy Gates for High Voltage Transistor Devices
  • Dummy Gates for High Voltage Transistor Devices
  • Dummy Gates for High Voltage Transistor Devices

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Embodiment Construction

[0033] It should be appreciated that the following disclosure provides many different embodiments, or examples, for implementing different elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. For example, the formation of a first component over or on a second component in the following description may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which the first and second components may be formed in direct contact. An embodiment in which an additional part is formed between the second parts such that the first and second parts are not in direct contact. In addition, the present invention may use reference numerals and / or letters instead in various examples. This reciprocal is merely for the sake of simplicity and clarity, and does not in itself ...

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Abstract

The invention provides a semiconductor device and a forming method thereof. The semiconductor device includes a first doped region and a second doped region oppositely doped in a substrate; a first gate covering a part of the first doped region and a part of the second doped region is formed; Two or more second gates covering different parts of the second doped region are formed above the bottom; one or more gates located in the second doped region are only arranged between the two or more second gates a third doped region, so that the third doped region and the second doped region have opposite conductivity types; a source region located in the first doped region; and a source region located in the second doped region with respect to the second gate a drain region opposite to the first gate. The present invention provides dummy gates for high voltage transistor devices.

Description

[0001] References to related applications [0002] This application claims priority to US Provisional Patent Application Serial No. 61 / 579,924, filed December 23, 2011, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to semiconductor manufacturing, and in particular, to semiconductor devices and methods of manufacturing the same. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs, each generation having smaller and more complex circuits than the previous generation. However, these improvements have increased the complexity of processing and manufacturing ICs and, in order for these advancements to be realized, similar developments in IC processing and manufacturing are required. During the evolution of ICs, functional density (ie, the number of interconne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L21/28
CPCH01L29/0646H01L29/0634H01L29/0653H01L29/0847H01L29/1045H01L29/404H01L29/456H01L29/4933H01L29/665H01L29/66659H01L29/7835
Inventor 曾华洲谢孟纬
Owner TAIWAN SEMICON MFG CO LTD