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Improved Schottky Rectifier

A rectifier, Schottky contact technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as on-state voltage problems

Active Publication Date: 2016-02-17
VISHAY GENERAL SEMICONDUCTOR LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the on-state voltage drop of TMBS devices remains problematic in high voltage applications where the breakdown exceeds 300V
This is because the unipolar conduction mechanism of Schottky rectifiers is not as effective as the bipolar conduction characteristic of PIN type diodes

Method used

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  • Improved Schottky Rectifier
  • Improved Schottky Rectifier
  • Improved Schottky Rectifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] As described below, Schottky diode or rectifier devices are provided that provide fast speed and low switching losses like conventional Schottky diodes, but have higher current capability and considerably lower on-state losses.

[0020] image 3 One embodiment of a Schottky diode constructed in accordance with the principles of the invention is shown. As shown, the Schottky diode 300 includes a highly doped substrate 310 that is heavily doped with a dopant of a first conductivity type (eg, n+ type). The epitaxial drift layer 320 is formed on the substrate 310 and is more lightly doped with a dopant of the first conductivity type (eg, n-type). A lightly doped layer 330 of a second conductivity type (eg, p-type) is formed over the drift layer 320 . Lightly doped layers are sometimes referred to as transparent layers for the reasons described below. After the transparent layer 330 is formed, a metal layer 340 is deposited, which is formed of a metal capable of forming s...

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PUM

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Abstract

A semiconductor rectifier includes a semiconductor substrate having a first conductivity type. A first layer formed on the substrate has a first conductivity type and is more lightly doped than the substrate. A second layer having a second conductivity type is formed on the substrate, and a metal layer is disposed over the second layer. The second layer is lightly doped such that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer, and a second electrode is formed on the backside of the substrate.

Description

[0001] related application [0002] This application claims priority to U.S. Provisional Application No. 61 / 405,293, filed October 21, 2010, and U.S. Patent Application No. 13 / 222,249, filed August 31, 2011, which are incorporated by reference in their entirety at this. Background technique [0003] Conventional Schottky rectifiers are used in high speed applications as a replacement for conventional PIN diodes. They have limited blocking range and their main success is in applications requiring a breakdown voltage of less than about 200V. The main reason for their limited range of blocking voltages is because of the severe increase in the on-state forward voltage drop at high breakdown voltages, which in turn is caused by the decrease in the doping concentration of the drift region and the concomitant decrease in the caused by an increase in the depth of the drift region. As a result, the specific on-state resistance of the drift region is related to V BR 2.5 approximate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/868H01L21/329
CPCH01L29/872H01L29/8725H01L29/0619H01L29/66143H01L29/868H01L21/18H01L21/22H01L21/265
Inventor 许志维弗洛林·乌德雷亚林意茵
Owner VISHAY GENERAL SEMICONDUCTOR LLC