Mark period level light intensity accumulation based method for determining and searching alignment mark and alignment system

A technology for aligning marks and markings, which is applied in the directions of optics, microlithography exposure equipment, and photolithography on patterned surfaces. Machine productivity and other issues

Active Publication Date: 2013-07-10
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, this kind of operation cannot directly perform the alignment function after the CCD is captured. It is necessary to move the workpiece table again to perform scanning before calculating the alignment position.
[0011] In this case, the number of workpiece table movements is increased, which in turn affects alignment effic...

Method used

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  • Mark period level light intensity accumulation based method for determining and searching alignment mark and alignment system
  • Mark period level light intensity accumulation based method for determining and searching alignment mark and alignment system
  • Mark period level light intensity accumulation based method for determining and searching alignment mark and alignment system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] figure 1 Shown is a schematic diagram of a conventional dual-light source multi-stage alignment system.

[0061] Such as figure 1 As shown, the dual light source multi-level alignment system includes light source modules 11, 21, reference grating 2, optical fibers 13, 23, prisms 14, 24, polarizer 3, objective lens 4, mark 5, and order wedge 15, 25, Mirrors 16, 26, objective lenses 17, 27, image planes 18, 28, and detectors 19, 29.

[0062] The specific working principle of the dual-light source multi-stage alignment system is common knowledge for people with general knowledge in the field, and will not be repeated here.

[0063] figure 2 Shown is the composition form of the alignment mark. After the mark is irradiated by the alignment system, the reflection information of each level of light is obtained.

[0064] image 3 Shown is a schematic diagram of the waveform collected for light intensity superposition after this type of mark is illuminated.

[0065] In this embodime...

Embodiment 2

[0079] figure 1 Shown is a schematic diagram of a conventional dual-light source multi-stage alignment system.

[0080] Such as figure 1 As shown, the dual light source multi-level alignment system includes light source modules 11, 21, reference grating 2, optical fibers 13, 23, prisms 14, 24, polarizer 3, objective lens 4, mark 5, and order wedge 15, 25, Mirrors 16, 26, objective lenses 17, 27, image planes 18, 28, and detectors 19, 29.

[0081] The specific working principle of the dual-light source multi-stage alignment system is common knowledge for people with general knowledge in the field, and will not be repeated here.

[0082] figure 2 Shown is the composition form of the alignment mark. After the mark is irradiated by the alignment system, the reflection information of each level of light is obtained.

[0083] image 3 Shown is a schematic diagram of the waveform collected for light intensity superposition after this type of mark is illuminated.

[0084] In this embodime...

Embodiment 3

[0100] figure 1 Shown is a schematic diagram of a conventional dual-light source multi-stage alignment system.

[0101] Such as figure 1 As shown, the dual-light source multi-stage alignment system includes light source modules 11, 12, reference grating 2, optical fibers 13, 23, prisms 14, 24, polarizer 3, objective lens 4, mark 5, and order wedge 15, 25, Mirrors 16, 26, objective lenses 17, 27, image planes 18, 28, and detectors 19, 29.

[0102] The specific working principle of the dual-light source multi-stage alignment system is common knowledge for people with general knowledge in the field, and will not be repeated here.

[0103] figure 2 Shown is the composition form of the alignment mark. After the mark is irradiated, the alignment system obtains the reflection information of each level of light.

[0104] image 3 Shown is a schematic diagram of the waveform collected for light intensity superposition after this type of mark is illuminated.

[0105] In this embodiment, a r...

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Abstract

The invention discloses a mark period level light intensity accumulation based method for determining and searching an alignment mark and an alignment system. The method is characterized by comprising the steps of: acquiring light intensity of first level light of each period of a multiple-period mark, accumulating the light intensity to obtain a light intensity signal, and acquiring a position of an alignment mark through the light intensity signal; according to a preset experience threshold of each period, screening a burr point with abnormal light intensity value in the light intensity signal; conducting a minimum threshold inspection on the light intensity signal; if the light intensity signal does not meet the minimum threshold, then conducting position correction; if the light intensity signal meets the minimum threshold, then superposing first level light intensity of each period; after superposition of the light intensity, detecting whether slopes of a highest peak point, a left peak point and a right peak point meet the requirements; if it does not, then conducting position correction; if it does, then using the point as a mark position obtained by superposition of light intensity; and then calculating an absolute value of the mark position with an issued desired mark position to determine whether an alignment mark is successfully searched. The invention also discloses an alignment system, and the alignment system employs the mark period level light intensity accumulation based method.

Description

Technical field [0001] The present invention involves the field of integrated circuit manufacturing equipment, especially a method for judging the labeling system based on the strong value of the label cycle -based secondary light strength. Background technique [0002] The lithography device is the main device for manufacturing integrated circuits. Its role is to make different mask patterns in accordance with the accurate confrontation of the base (semiconductor silicon wafer or LCD board). [0003] However, this alignment position changes due to the physical and chemical changes experienced by continuous graphics. Therefore, a targeted system is required to ensure that the alignment position of the scholarship corresponding to the silicon wafers can be accurately accurately met at each time. [0004] As the number of electronic components on the surface area per unit increase and the size of the size of electronic components are becoming smaller and smaller, the accuracy requi...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F9/00
Inventor 韩悦张磊赵新
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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