Thin film transistor and its preparation method, array substrate, display device
A thin-film transistor and semiconductor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of unstable performance and low on-state current, and achieve stable performance, large on-state current, and high display quality. Effect
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Embodiment 1
[0039] This embodiment provides a thin film transistor, which includes a source, a drain, a semiconductor layer, a gate, and a gate insulating layer, and the thin film transistor further includes:
[0040] Provided on the surface of the semiconductor layer, the source conductive layer and the drain conductive layer are spaced apart from each other, the source conductive layer is connected to the source, and the drain conductive layer is connected to the drain; and the source conductive The shortest distance between the layer and the drain conductive layer is smaller than the shortest distance between the source and the drain.
[0041] The thin film transistor of this embodiment is provided with a source conductive layer and a drain conductive layer, and the current on the source and drain can be conducted to the source conductive layer and the drain conductive layer respectively, so the semiconductor used for conduction The length of the region is determined by the shortest di...
Embodiment 2
[0043] This embodiment provides a thin film transistor, such as Figure 2 to Figure 7 As shown, it includes source 3, drain 4, semiconductor layer 1, gate 2, gate insulating layer 21, source conductive layer 31, drain conductive layer 41; wherein, source conductive layer 31 and drain conductive Layer 41 is arranged on the surface of semiconductor layer 1 (that is, both conductive layers 31, 41 are in contact with the surface of semiconductor layer 1), and the two conductive layers 31, 41 are separated from each other (that is, there is no contact between the two conductive layers 31, 41) . And the shortest distance d between the source conductive layer 31 and the drain conductive layer 32 is smaller than the shortest distance between the source 3 and the drain 2 .
[0044] Wherein, as a conventional structure of a thin film transistor, the gate insulating layer 21 should separate the gate 2 from the semiconductor layer 1, and the source 3 and the drain 4 are respectively connec...
Embodiment 3
[0076] This embodiment provides an array substrate, which includes the above thin film transistor.
[0077] Preferably, the array substrate may include a substrate and gate lines and data lines formed on the substrate, the gate lines and the data lines intersect each other and define a plurality of pixel units, each pixel unit is provided with at least one thin film transistor, and At least one of the thin film transistors is the above thin film transistor.
[0078] Of course, other known structures such as storage capacitors, pixel electrodes, organic light emitting diodes, and pixel definition layers (PDLs) should also be provided in the array substrate, which will not be described in detail here.
[0079] Since the array substrate of this embodiment has the above-mentioned thin film transistors, its performance is stable and can be used to realize high-quality display.
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