Package substrate and production method thereof

Abstract

The invention discloses a package substrate and a production method thereof. The production method of the package substrate includes forming a circuit layer which comprises an electrical contact pad and an external connection portion on the surface of a substrate body; forming a first insulating protective layer on the substrate body and exposing the electrical contact pad and the external connection portion; electrically connecting an electroplating device with the external connection portion to form a surface processing layer on the electrical contact pad through electroplating; removing the external connecting portion; and forming a second insulating protective layer on an exposed surface and the first insulating protective layer of the substrate body and exposing the electrical contact pad. Smoothness of surfaces of the insulating protective layers is maintained and reliability of products is improved due to the insulating protective layers which are formed through two times.

Description

technical field [0001] The invention relates to a packaging substrate and its manufacturing method, especially to a packaging substrate for carrying semiconductor chips and its manufacturing method. Background technique [0002] With the development of multi-functional and high-performance electronic products, different packaging types have been developed for semiconductor packaging structures, such as Flip Chip Package and Wire Bond. In the current technology, electrode pads (electronic pads) are arranged on the surface of the semiconductor integrated circuit (IC) chip, and the packaging substrate also has corresponding electrical contact pads, and solder bumps ( flip-chip) or gold wires (wire bonding) to electrically connect the chip to the packaging substrate. Generally, a surface treatment layer is formed on the electrical contact pads of the package substrate to prevent oxidation, and then the subsequent wire bonding or flip chip process is performed. [0003] see Fi...

AI Technical Summary

Problems solved by technology

[0008] However, in the existing manufacturing method of the packaging substrate 1, after removing the external portion 121, a depression h appears on the surface of the insulating protection layer 13. When a chip is placed on the insulating protection layer 13 in the subsequent process, the stress will be will concentrate around the depression h, causing the insulating protective layer 13 to crack around the depression h, thereby affecting the reliability of the product, and in severe cases, the product needs to be scrapped

[0009] In addition, when the encapsulant is formed in the subsequent process, the adhesive material is easy to flow into the depression h, so the flow direction of the adhesive material cannot be controlled, resulting in an abnormal phenomenon in the structure of the encapsulant

[0010] Furthermore, in the existing manufacturing method of the packaging substrate 1, the surface treatment layer 14 is formed first, and then the insulating protection layer 13 is formed, so the insulating protection layer 13 will cover part of the material of the surface treatment layer 14, resulting in the insulating protection layer 13 It is easy to delaminate at the surface treatment layer 14 due to poor combination with the surface treatment layer 14

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