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Electrode matched with Mg-Si-Sn-based thermoelectric element and connecting process thereof

A mg-si-sn, thermoelectric element technology, applied in the field of electrodes, can solve the problem of low performance of Si thermoelectric materials, and achieve the effects of avoiding micro-cracks, improving service life and simplifying the process

Active Publication Date: 2013-07-24
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Mg 2 There are many studies on Si-based thermoelectric devices, but doped n-type Mg 2 The low performance of Si thermoelectric materials will always be an important factor restricting its practical application

Method used

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  • Electrode matched with Mg-Si-Sn-based thermoelectric element and connecting process thereof
  • Electrode matched with Mg-Si-Sn-based thermoelectric element and connecting process thereof
  • Electrode matched with Mg-Si-Sn-based thermoelectric element and connecting process thereof

Examples

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Effect test

Embodiment 1

[0029] An electrode matched with a Mg-Si-Sn based thermoelectric element, which is composed of a mixture of Ni-Al alloy and metal element Al, wherein the mass percentage of metal element Al is 40%, and the balance is Ni-Al alloy , the mass percent content of Ni in the Ni-Al alloy is 47%, and the rest is Al.

[0030] The connection process between electrodes and thermoelectric elements of the present invention is connected by spark plasma sintering, and the specific process steps are:

[0031] 1) Take 3.0g of Mg-Si-Sn-based material powder prepared by solid-state reaction, and conduct the first step of spark plasma sintering in a graphite mold. During sintering, the vacuum degree is 25Pa, the sintering pressure is 30MPa, and the sintering temperature is 650℃. Obtain a dense Mg-Si-Sn block with a thickness of 5mm;

[0032] 2) The upper and lower surfaces of the dense Mg-Si-Sn block obtained in step 1) were polished with 400-grit sandpaper, and then ultrasonically treated for 10...

Embodiment 2

[0038] An electrode matched with a Mg-Si-Sn based thermoelectric element, which is composed of a mixture of Ni-Al alloy and metal element Al, wherein the mass percentage of metal element Al is 40%, and the balance is Ni-Al alloy , the mass percent content of Ni in the Ni-Al alloy is 47%, and the rest is Al.

[0039] The connection process between electrodes and thermoelectric elements of the present invention is connected by spark plasma sintering, and the specific process steps are:

[0040] 1) Take 3.0g of Mg-Si-Sn-based material powder prepared by solid-state reaction, and conduct the first step of spark plasma sintering in a graphite mold. The vacuum degree during sintering is 25Pa, the sintering pressure is 30MPa, and the sintering temperature is 670°C. Obtain a dense Mg-Si-Sn block with a thickness of 5mm;

[0041] 2) The upper and lower surfaces of the dense Mg-Si-Sn block obtained in step 1) were polished with 320-grit sandpaper, and then ultrasonically treated for 10...

Embodiment 3

[0047] An electrode matched with a Mg-Si-Sn based thermoelectric element, which is composed of a mixture of Ni-Al alloy and metal element Al, wherein the mass percentage of metal element Al is 40%, and the balance is Ni-Al alloy , the mass percent content of Ni in the Ni-Al alloy is 47%, and the rest is Al.

[0048] The connection process between electrodes and thermoelectric elements of the present invention is connected by spark plasma sintering, and the specific process steps are:

[0049] 1) Take 3.0g of Mg-Si-Sn-based material powder prepared by solid-state reaction, and conduct the first step of spark plasma sintering in a graphite mold. During sintering, the vacuum degree is 25Pa, the sintering pressure is 30MPa, and the sintering temperature is 700°C. Obtain a dense Mg-Si-Sn block with a thickness of 5mm;

[0050] 2) The upper and lower surfaces of the dense Mg-Si-Sn block obtained in step 1) were polished with 400-grit sandpaper, and then ultrasonically treated for 1...

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Abstract

The invention relates to an electrode matched with an Mg-Si-Sn-based thermoelectric element and a connecting process thereof. The electrode is a mixture consisting of the following components in percentage by mass, 30 to 50 percent of metal elementary substance Al and the balance of Ni-Al alloy. The electrode and a thermoelectric material interface are well combined, the reliability is high, the technical operation is simple and convenient, and the service life can be prolonged due to the fact that the good thermal match between the electrode and the thermoelectric material reduces the thermal stress at an interface to the greatest degree.

Description

technical field [0001] The invention relates to an electrode matched with a Mg-Si-Sn base thermoelectric element, and belongs to the technical field of electrode selection and preparation of thermoelectric devices. Background technique [0002] Thermoelectric materials are a class of functional materials that can realize mutual conversion between thermal energy and electrical energy. The conversion of thermal energy to electrical energy can be realized by using its own Seebeck effect, while the Peltier effect enables the application of thermoelectric refrigeration technology. Thermoelectric devices made of thermoelectric materials have many advantages, such as no mechanical moving parts during operation, long life, high reliability, and no pollution to the environment. With the aggravation of the global energy crisis, thermoelectric devices have attracted the attention of scientific research in various countries. At present, low-temperature thermoelectric materials and devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/20H01L35/34H10N10/854H10N10/01
Inventor 唐新峰陈耿柳伟张强
Owner WUHAN UNIV OF TECH
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