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A kind of loading platform for plasma processing device

A technology of plasma and processing equipment, which is applied in the field of the loading stage of plasma processing equipment, can solve the problems of poor uniformity and lower yield, and achieve the effect of improving the uniformity of the process and improving the edge effect

Active Publication Date: 2015-12-09
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the semiconductor process part is circular, the area of ​​the outer ring is larger, and the poor uniformity of each process link in the edge part will lead to a significant drop in yield

Method used

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  • A kind of loading platform for plasma processing device
  • A kind of loading platform for plasma processing device
  • A kind of loading platform for plasma processing device

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Experimental program
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Embodiment Construction

[0031] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0032] The present invention divides the dielectric between the lower electrode and the substrate in the vacuum processing device into a plurality of regions that can be stretched and moved in the vertical direction, so as to generate one or more cavities at different positions corresponding to the substrate. The dielectric constant of the equivalent capacitance between the lower electrode and the lower surface of the substrate is changed, thereby further changing the size of the equivalent capacitance, so as to optimize the process uniformity of the substrate.

[0033] figure 1 It is a structural schematic diagram of the slide stage of the vacuum processing device of a specific embodiment of the present invention. In a specific embodiment to be described below, the vacuum processing device is particularly an etching machine. Such as figure 1 As ...

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Abstract

The invention provides a slide holder applied to a plasma processing device, which is used for bearing a substrate, wherein the slide holder comprises a first electrode, a static sucking disc and a driving device; the first electrode is connected with a radio-frequency power supply with first frequency and is used for producing plasmas; the static sucking disc is positioned above the first electrode, and comprises a first dielectric layer and a second dielectric layer, an electrode used for generating electrostatic attraction is embedded in the first dielectric layer; the second dielectric layer is positioned under the first dielectric layer, and at least comprises a first area, a third area and a second area, the first area corresponds to the central region of the substrate, the third area corresponds to the marginal area of the substrate, and the second area is positioned between the first area and the third area; and in addition, the driving device is used for selectively driving one of the first area, the second area and the third area to stretch out and draw back in the vertical direction. The invention further provides the plasma processing device comprising the slide holder. According to the invention, edge effect can be improved, and manufacture procedure uniformity can be achieved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a loading platform for a plasma processing device. Background technique [0002] The edge effect of semiconductor process parts is a problem that plagues the semiconductor industry. The so-called edge effect of semiconductor process parts means that in the process of plasma processing, because the plasma is controlled by the electric field, and the field strength at the edge of the upper and lower poles will be affected by the edge conditions, there will always be a part of the electric field line bent, resulting in the edge of the electric field The field strength is uneven, which in turn causes the plasma concentration in this part to be uneven. In this case, there is also a circle of uneven processing around the produced semiconductor process piece. This inhomogeneity is more obvious when the frequency of the radio frequency electric field is higher. When the radio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/20H01L21/683
Inventor 陶铮凯文·佩尔斯松尾裕史曹雪操
Owner ADVANCED MICRO FAB EQUIP INC CHINA