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Microwave emitting device and surface wave plasma processing apparatus

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as high electron temperature, plasma damage to tiny components, difficult semiconductor wafer plasma processing, etc., and achieve the effect of improving uniformity

Active Publication Date: 2013-07-31
TOKYO ELECTRON LTD
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Problems solved by technology

[0003] However, in the commonly used parallel plate type and inductively coupled plasma processing devices, the electron temperature of the generated plasma is high, which causes plasma damage to tiny components. In addition, because the area with high plasma density is Therefore, it is difficult to perform plasma treatment on large semiconductor wafers uniformly and at high speed

Method used

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  • Microwave emitting device and surface wave plasma processing apparatus
  • Microwave emitting device and surface wave plasma processing apparatus
  • Microwave emitting device and surface wave plasma processing apparatus

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Embodiment Construction

[0066] Embodiments of the present invention will be described in detail below with reference to the drawings.

[0067]

[0068] figure 1 is a cross-sectional view showing a schematic structure of a surface wave plasma processing apparatus having a microwave radiation mechanism according to an embodiment of the present invention, figure 2 yes means figure 1 Schematic diagram of the composition of the microwave plasma source used in the surface wave plasma processing device, image 3 is a plan view schematically showing a microwave supply part of a microwave plasma source, Figure 4 is a cross-sectional view showing the microwave radiation mechanism of the microwave plasma source, Figure 5 It is the edge indicating the feeding mechanism of the microwave radiation mechanism Figure 4 A cross-sectional view of the AA' line, Image 6 is the edge of the core and sliding parts in the tuner Figure 4 Cross-sectional view of the BB' line.

[0069] The surface wave plasma pro...

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Abstract

A microwave emitting device emits a microwave generated by a microwave generation unit into a chamber in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber. The device includes: a transmission line having a tubular outer conductor and an inner conductor disposed in the outer conductor to transmit the microwave; an antenna to emit the microwave transmitted through the microwave transmission line into the chamber through slots; a dielectric member to transmit the microwave emitted from the antenna to generate a surface wave; and a DC voltage application member to apply a positive DC voltage to a plasma generation region where a surface wave plasma is generated by the surface wave.

Description

technical field [0001] The invention relates to a microwave radiation mechanism and a surface wave plasma processing device. Background technique [0002] Plasma processing is an indispensable technology in the manufacture of semiconductor devices. In recent years, due to the high integration and high-speed requirements of LSI (Large scale integration: Large Scale Integration), the design rules of semiconductor elements that constitute LSI have become more and more complex. Along with miniaturization and increase in size of semiconductor wafers, plasma processing apparatuses are also required to respond to such miniaturization and increase in size. [0003] However, in the commonly used parallel plate type and inductively coupled plasma processing devices, the electron temperature of the generated plasma is high, which causes plasma damage to tiny components. In addition, because the area with high plasma density is Therefore, it is difficult to perform plasma treatment on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32293H05H1/46H01L21/3065H01J37/32027H01J37/32H01J37/32192H05H1/4615H01J37/3222H05H1/30
Inventor 池田太郎长田勇辉
Owner TOKYO ELECTRON LTD
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