Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma treatment device

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of aggravating plasma bombardment and damage to a focusing ring, and achieve the effects of prolonging service life and uniform processing technology

Active Publication Date: 2016-01-27
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for components with conductive materials in the reaction chamber, such as the focus ring, this superimposed vertical RF electric field will intensify the bombardment of the plasma on the focus ring, which may cause damage to the focus ring

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma treatment device
  • Plasma treatment device
  • Plasma treatment device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] See figure 2 , which is a schematic structural diagram of the plasma processing chamber in this embodiment. The plasma processing device includes a reaction chamber 10, wherein a reaction gas is introduced; the top of the reaction chamber 10 is provided with a reaction gas shower head 11, and the reaction gas shower head 11 includes a flat upper electrode 21, and the upper electrode 21 is grounded. ; The bottom of the reaction chamber 10 is provided with an electrostatic chuck 12 for clamping a substrate 30, which can be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display. A flat-plate lower electrode 22 parallel to the upper electrode 21 is disposed in the electrostatic chuck 12 . The lower electrode 22 is connected to the first radio frequency source 40a and the second radio frequency source 40b through the first radio frequency matching device 41 . The first radio frequency source 40a and the second radio ...

Embodiment 2

[0037] Figure 4 is a schematic structural view of another embodiment of the plasma processing device provided by the present invention, Figure 4 The illustrated embodiments can be provided independently or in combination with the above-described embodiments.

[0038] The difference between this embodiment and Embodiment 1 is that the reaction chamber in this embodiment includes a plasma confinement assembly 15, which includes a plurality of concentric rings 15a stacked on each other in the vertical direction and arranged parallel to each other at intervals. These concentric rings 15a Surrounding the area above the electrostatic chuck, that is, the area between the upper electrode 21 and the lower electrode 22 , this area can be considered as a reaction area P where plasma is formed and the substrate 30 is processed. There is a gap between the adjacent concentric rings 15a. When the substrate 30 is treated with plasma, the treated reaction gas can be discharged out of the re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a plasma processing device which comprises a reaction cavity, a first radio-frequency power source and a second radio-frequency power source, wherein the reaction cavity comprises an upper electrode and a lower electrode which are arranged in parallel, an annular insulator, and opening metal ring electrodes; the upper electrode is arranged in a gas spray header; the lower electrode is arranged in a static clamping chuck; the first radio-frequency power source is used for forming a perpendicular radio-frequency electric field between the upper and lower electrodes to generate plasma; the second radio-frequency power source is used for adjusting energy of the plasma; the annular insulator surrounds the static clamping chuck and / or an area above the static clamping chuck; the opening metal ring electrodes are wound by wires, and embedded into the annular insulator; and a radio-frequency current is supplied in the metal ring electrodes to generate a horizontal induction electric field. The plasma processing device can improve the uniformity of density distribution of the plasma in the reaction cavity effectively.

Description

technical field [0001] The invention relates to semiconductor processing equipment, in particular to a plasma processing device. Background technique [0002] In recent years, with the development of semiconductor manufacturing technology, the requirements for the integration and performance of components are getting higher and higher, and plasma technology (Plasma Technology) has been widely used. Plasma technology introduces a reactive gas and electron flow into the reaction chamber of the plasma processing device, uses a radio frequency electric field to accelerate the electrons, and collides with the reactive gas to ionize the reactive gas and generate plasma. The generated plasma can be used Used in various semiconductor manufacturing processes, such as deposition processes (such as chemical vapor deposition), etching processes (such as dry etching), etc. [0003] Plasma processing often employs capacitively coupled plasma processing devices to generate plasma. figure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
Inventor 倪图强梁洁罗伟义
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com