Plasma treatment device

Abstract

The present invention provides a plasma processing device, wherein, the plasma processing device includes a reaction chamber, and an upper electrode and a lower electrode parallel to each other are arranged in the reaction chamber, and the lower electrode is arranged in a base, and the The base station includes an electrostatic chuck, and the substrate is placed on the electrostatic chuck for processing, and it is characterized in that the plasma processing device further includes: an annular insulator, which surrounds the electrostatic chuck and / or the The upper area of ​​the electrostatic chuck; the first electrode, which is embedded in the annular insulator; the first radio frequency power source, connected to the lower electrode through the first radio frequency matching device, in order to provide radio frequency power on the upper electrode A radio frequency electric field in a vertical direction is formed between the lower electrode and the lower electrode to generate plasma; a pulsed direct current power supply is connected to the first electrode. The invention can improve the uniformity of substrate manufacturing process.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma processing device. Background technique [0002] In recent years, with the development of semiconductor manufacturing processes, the requirements for the integration and performance of components are getting higher and higher, and plasma technology (Plasma Technology) has been widely used. Plasma technology introduces a reactive gas and electron flow into the reaction chamber of the plasma processing device, uses a radio frequency electric field to accelerate the electrons, and collides with the reactive gas to ionize the reactive gas and generate plasma. The generated plasma can be used Used in various semiconductor manufacturing processes, such as deposition processes (such as chemical vapor deposition), etching processes (such as dry etching), etc. [0003] Plasma processing often employs capacitively coupled plasma processing devices to generate plasma. f...

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Problems solved by technology

[0004] However, in practical applications, the uniformity of the plasma density generated by the capacitively coupled plasma processing device is not ideal.

Due to the structural characteristics of capacitive coupling, there is a difference in the electric field strength between the middle region and the edge region in the reaction chamber, and the density of the generated plasma has a characteristic distribution that the middle region is higher than the edge region, and due to the plasma processing rate of the substrate In connection with this plasma density, it will eventually lead to inhomogeneous plasma treatment process: for example, fast etching or processing rate in the middle of the substrate, slow etching or processing rate at the edge

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