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Method for etching organic matter layer

An organic, main etching technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to solve problems such as sidewall damage, notch pattern, distortion, etc.

Active Publication Date: 2013-07-31
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sidewalls of these material layers are easily damaged during etching to form gaps and cause pattern distortion
Existing etching methods often use HBr / O2, CO / O2, N2 / H2 and other etching gases to etch these BPR layers, but it is difficult to obtain accurate etching patterns with these gases and matching etching processes

Method used

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  • Method for etching organic matter layer
  • Method for etching organic matter layer
  • Method for etching organic matter layer

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Embodiment Construction

[0014] Embodiments of the present invention provide a system and method for controlling RF power applied to a plasma processing chamber to minimize reflected power and efficiently apply RF power to the plasma. Various embodiments enable automatic adjustment of RF power without the need to modify validated process recipes. This automatic adjustment can be achieved by adjusting the frequency matching and radio frequency matching network parameters.

[0015] figure 1 A plasma reaction chamber 1 in which etching according to the invention is performed is shown. The reaction chamber 1 includes a base 33 on which a radio frequency power supply is connected. Wherein the base 33 is also connected with low-frequency radio-frequency power as the lower electrode, and the energy of the plasma is adjusted by adjusting the power of the low-frequency radio-frequency power after the plasma is ignited. The base 33 includes a substrate fixing device 34, which may be an electrostatic chuck or...

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Abstract

A method for etching an organic matter layer, such as a photoresist material layer as a bottom layer comprises the following steps of: placing a substrate to be etched into a plasma reaction chamber, wherein a target organic matter material layer is etched on the substrate; introducing reactant gases into the plasma reaction chamber; applying radio frequency electric energy to the reactant gases to ignite plasma and etching the substrate, wherein the reactant gases comprise main etching gas and diluent gas; the main etching gas is selected from CO2, the diluent gas is selected from one or mixture of Ar, N2 and CO, and the flow of the diluent gas is smaller than that of the main etching gas.

Description

technical field [0001] The invention relates to a plasma etching method of an organic layer, in particular to an etching method of an organic layer under the requirement of a low critical dimension (CD). Background technique [0002] In the field of semiconductor device manufacturing, various reaction chambers using plasma for processing are ubiquitous. As the processing precision is getting higher and higher, the critical dimension (critical dimension) is getting smaller and smaller, and now the industry's critical dimension has reached below 45nm, such as the 22nm CPU has been released. However, the existing method of optically irradiating photoresist to obtain processed patterns can only reach a minimum critical dimension of about 45nm. To obtain higher-precision patterns requires a huge price and has no economic value. In order to obtain the processing capability of smaller critical dimensions under the conditions of existing photolithography technology, critical dimens...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
Inventor 凯文·佩尔斯
Owner ADVANCED MICRO FAB EQUIP INC CHINA