Method for reducing Reset current of RRAM (resistive random access memory) device
A technology of resistive memory and resistive memory, which is applied in the direction of electrical components, etc., can solve the problems of high Reset current, high power consumption, unfavorable application of resistive memory devices, etc., and achieve the reduction of Reset current, low manufacturing cost, The effect of reducing heat loss
Inactive Publication Date: 2013-08-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0006] At present, one of the main problems of resistive memory is that the device needs a large Reset current to change from a low-resistance state to a high-resistance state. A large Reset current means greater power consumption, which is not conducive to the practical use of resistive memory devices. Applications
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[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0024] The drawings and their descriptions provided herein are only for illustrating embodiments of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensional ratios. In the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the representations in the figures are schematic and not intended to limit the scope of the present invention.
[0025] The method for reducing the Reset current of the resistive memory device provided by the present invention is to insert a thermal protection layer between the lower electrode and the resistive memory layer and / or between t...
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The invention relates to the technical fields of the microelectronic technology and memory devices, and discloses a method for reducing the Reset current of an RRAM device. The RRAM device comprises a bottom electrode, a resistive memory layer and a top electrode sequentially from the bottom up. The Reset current refers to the current required by the transition of the RRAM device from a low impedance state to a high impedance state. According to the method, a thermal protective layer is inserted between the bottom electrode and the resistive memory layer, and / or between the resistive memory layer and the top electrode, and used for reducing the heat loss of the RRAM device in the transition process from the low impedance state to the high impedance state, and then the Reset current of the RRAM device is reduced. The method has the advantages that the heat loss of the RRAM device can be reduced effectively in the Reset process through adding the thermal protective layer, so that the Reset current of the device is reduced.
Description
technical field [0001] The invention relates to the technical fields of microelectronics and memory devices, in particular to a method for reducing the Reset current required for a resistive variable memory device to change from a low-resistance state to a high-resistance state. Background technique [0002] Memory products occupy a very important position in the semiconductor industry, have a huge market demand, and are an important part of the products of many international and domestic semiconductor companies and industries. Since the 21st century, with the rapid development of computer technology, Internet technology and popular electronic products, the demand for electronic information storage products has shown a rapid upward trend. The rapid development of this digital high technology puts forward higher requirements on the performance of information storage products, such as high speed, high density, long life and so on. [0003] However, the existing random memory ...
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IPC IPC(8): H01L45/00
Inventor 刘明李颖弢龙世兵刘琦吕杭炳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI