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Nonvolatile storage element and nonvolatile storage device

A non-volatile storage and component technology, which is applied in the direction of electrical components, information storage, static memory, etc., can solve the problems of large deviation of resistance change characteristics, large resistance value deviation of resistance change layer, etc., to achieve miniaturization and The effect of increasing the capacity

Active Publication Date: 2015-12-23
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A variable resistance element having such a conductive thread has a problem that the variation in the resistance value of the variable resistance layer in which the resistance changes becomes large, and the variation in the variable resistance characteristic becomes large.

Method used

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  • Nonvolatile storage element and nonvolatile storage device
  • Nonvolatile storage element and nonvolatile storage device
  • Nonvolatile storage element and nonvolatile storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0069] [Structure of non-volatile memory element]

[0070] figure 1 It is a cross-sectional view showing an example of the configuration of the nonvolatile memory element according to Embodiment 1 of the present invention.

[0071] The nonvolatile memory element 100 of this embodiment includes a substrate 101, an interlayer insulating film 102 formed on the substrate 101, a first electrode 103 formed on the interlayer insulating film 102, a second electrode 106, and The variable resistance layer 104 is sandwiched between the first electrode 103 and the second electrode 106 .

[0072] The variable resistance layer 104 is interposed between the first electrode 103 and the second electrode 106 , and its resistance value changes reversibly according to an electrical signal applied between the first electrode 103 and the second electrode 106 . For example, the variable resistance layer 104 is a layer that reversibly transitions between a high-resistance state and a low-resistanc...

Embodiment approach 2

[0144] The nonvolatile memory element according to Embodiment 1 described above can be applied to nonvolatile memory devices of various forms. The nonvolatile memory device according to Embodiment 2 is a nonvolatile memory device provided with the nonvolatile memory element according to Embodiment 1, and the nonvolatile memory device according to Embodiment 1 exists at an intersection (three-dimensional intersection) between a word line and a bit line. 1 is a so-called cross-point type nonvolatile memory device that relates to a nonvolatile memory element.

[0145] [Configuration of non-volatile memory device]

[0146] Figure 10 It is a block diagram showing the configuration of the nonvolatile memory device 300 according to Embodiment 2 of the present invention. and, Figure 11 is showing Figure 10 A perspective view of the configuration of Part A (4-bit size configuration).

[0147] Such as Figure 10 As shown, the nonvolatile memory device 200 according to this embo...

Embodiment approach 3

[0179] The nonvolatile memory device according to Embodiment 3 is a nonvolatile memory device including the nonvolatile memory element according to Embodiment 1, and is a so-called 1T1R type nonvolatile memory device that is a 1 transistor / 1 nonvolatile memory unit. volatile storage device.

[0180] [Configuration of non-volatile memory device]

[0181] Figure 14 It is a block diagram showing the configuration of the nonvolatile memory device 300 according to Embodiment 3 of the present invention. and, Figure 15 is showing Figure 14 A cross-sectional view of the structure of part C (2-bit size structure).

[0182] Such as Figure 14 As shown, the nonvolatile memory device 300 according to this embodiment includes a semiconductor substrate, and includes a memory main body 301 on the semiconductor substrate. The memory main body 301 includes a memory array 302, a row selection circuit / driver 303, and a column selection circuit 304. , a write circuit 305 for writing info...

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Abstract

The nonvolatile memory device includes a first electrode (103), a second electrode (106), and a variable resistance layer (104), and the variable resistance layer (104) includes: a first oxide layer (104a), containing a first metal Oxide; the second oxide layer (104b), arranged in contact between the first oxide layer (104a) and the second electrode (106), contains the oxide of the second metal, and the first oxide layer (104a ) is smaller than the oxygen deficiency rate; and the local area (105) is arranged in contact with the second electrode (106) in the first oxide layer (104a) and the second oxide layer (104b), and is not connected to the first electrode ( 103 ) are in contact with each other, and have a higher oxygen deficiency rate than the second oxide layer ( 104 b ), and a different oxygen deficiency rate from the first oxide layer ( 104 a ).

Description

technical field [0001] The present invention relates to a nonvolatile memory element, and more particularly to a nonvolatile memory device including a variable resistance nonvolatile memory element whose resistance value changes reversibly in response to an applied electrical signal and non-volatile storage elements. Background technique [0002] In recent years, with the development of digital technology for electrical equipment, there has been an increasing demand for large-capacity, non-volatile storage devices in order to store data such as music, images, and information. As one of the countermeasures to respond to such demands, a nonvolatile memory element whose resistance value changes according to an applied electrical signal and keeps this state is used for a nonvolatile memory device (hereinafter referred to as ReRAM) of a memory cell. Being noticed. This is due to the fact that the structure of the non-volatile storage element is relatively simple, it is easy to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/105H01L45/00H01L49/00
CPCG11C13/0007G11C13/0061G11C13/0064G11C13/0069G11C2213/55G11C2213/72G11C2213/79H10B63/20H10B63/30H10B63/80H10N70/24H10N70/826H10N70/8833H10N70/841G11C13/004
Inventor 魏志强高木刚三谷觉村冈俊作片山幸治
Owner PANASONIC SEMICON SOLUTIONS CO LTD