Memory cell of flash memory and forming method
A storage unit and flash memory technology, applied in electrical components, electric solid state devices, circuits, etc., can solve the problems of increasing the volume of flash memory devices, reducing the bit density of flash memory, and reducing bit cost, and achieves reduction in area, bit cost, etc. The effect of increasing the bit density
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[0056] The inventors found that in the existing BiCS structure of flash memory, several layers of polysilicon layers in the control gate layer of flash memory are on the step region of the semiconductor substrate, from the position close to the array region to the outside of the array region from top to bottom layer by layer Incrementing forms a ladder shape, which causes a waste of space in the storage unit of the flash memory, thereby increasing the area of the storage unit, thereby reducing the bit density of the flash memory and increasing the bit cost of the flash memory.
[0057] In order to reduce the area of the storage unit of the flash memory, thereby increasing the bit density of the flash memory and reducing the bit cost of the flash memory, the inventor provides a storage unit of the flash memory, including:
[0058] A semiconductor substrate, the semiconductor substrate includes an array area and a step area, the step area is on both sides of the array area; a...
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