Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Reel-to-reel manufacturing method for cadmium sulfide buffering layer

A cadmium sulfide and buffer layer technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve problems such as large difference in band gap, increase in defect states, and low conversion efficiency of batteries

Inactive Publication Date: 2013-08-21
河北省任丘市永基光电太阳能有限公司
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In flexible CIGS thin film solar cells, the bandgap width of the window layer ZnO is 3.2eV, and the bandgap width of the CIGS absorbing layer is 1.02-1.68eV. The bandgap of the two is very different. Direct contact will form a heterojunction and produce a crystal lattice. Mismatch phenomenon, defect states increase, and ultimately lead to low conversion efficiency of the battery

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reel-to-reel manufacturing method for cadmium sulfide buffering layer
  • Reel-to-reel manufacturing method for cadmium sulfide buffering layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Embodiments of the present invention will be described in more detail below in conjunction with the accompanying drawings.

[0012] refer to figure 1 , is a flow chart of the roll-to-roll preparation method of the cadmium sulfide thin film of the present invention. Such as figure 1 As shown, the preparation method of the cadmium sulfide buffer layer of the present invention starts from step S1. Firstly, ammonia water is poured into the cadmium acetate solution of a specified concentration and stirred evenly. Then proceed to step S2, pour in the thiourea solution of the specified concentration, and continue to stir until a colorless and transparent solution is obtained. In step S3, the buffer solution ammonium acetate solution is used to adjust the pH value to pH 8-10. In step S4, the flexible substrate is dried in an oven and placed on rollers. Then proceed to step S5, start to heat the reaction solution, and this process is carried out in the liquid storage tank wi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a reel-to-reel manufacturing method for a cadmium sulfide buffering layer in a flexible CIGS thin film solar cell. A chemical bath deposition (CBD) is adopted to manufacture buffering layer cadmium sulfide thin films, the flexible CIGS thin film solar cell can obtain high photoelectric conversion efficiency through the CBD, and the reel-to-reel manufacturing method for the cadmium sulfide buffering layer is particularly suitable for continual reel-to-reel technological production on a large scale.

Description

technical field [0001] The invention relates to a roll-to-roll preparation method of a buffer layer cadmium sulfide of a flexible CIGS thin film solar cell. Background technique [0002] The performance of flexible CIGS thin film solar cells mainly depends on the preparation of the pn junction, and the entire pn junction actually spans the buffer layer, so the preparation of the buffer layer is crucial. In flexible CIGS thin film solar cells, the bandgap width of the window layer ZnO is 3.2eV, and the bandgap width of the CIGS absorbing layer is 1.02-1.68eV. The bandgap of the two is very different. Direct contact will form a heterojunction and produce a crystal lattice. The mismatch phenomenon and the increase of defect states eventually lead to low conversion efficiency of the battery. Therefore, a very thin buffer layer needs to be added between the absorbing layer and the window layer to solve this problem. At present, the most used and highly efficient is the II-VI co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 孙玉娣
Owner 河北省任丘市永基光电太阳能有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products