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A multi-stage 3db bridge circuit for high power synthesis

A bridge circuit and high-power technology, which is applied in the field of 3dB bridge coupling devices, can solve the problem of low combined power and achieve the effects of low cost, easy implementation, and high output power

Active Publication Date: 2016-02-17
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the 3dB bridge circuit is mostly used for two-way power synthesis, and the output power can only reach 100W, and the combined power is small.

Method used

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  • A multi-stage 3db bridge circuit for high power synthesis
  • A multi-stage 3db bridge circuit for high power synthesis
  • A multi-stage 3db bridge circuit for high power synthesis

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Embodiment one: if figure 1 As shown, n=2 is taken as an example for illustration. A multi-stage 3dB electric bridge circuit for high power synthesis, including an input coupling circuit and an output coupling circuit. The input coupling circuit and the output coupling circuit are connected through a field effect transistor 13, and the input terminal 1 of the input coupling circuit is sequentially passed through the first-stage input coupling microstrip line 2, the first-stage input 3dB bridge 3, and the second-stage input The 3dB electric bridge 4, the second stage input coupling microstrip line 5 are connected to the input end matching network circuit 6, the input end of the input coupling circuit is the input end 1 of the multistage 3dB electric bridge circuit, and the input end matching The output end of the network circuit is connected to the gate of the field effect transistor 13, and the drain of the field effect transistor 13 is sequentially passed through the ...

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PUM

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Abstract

The invention discloses a multilevel 3dB bridge circuit for high-power synthesis and relates to the technical field of a waveguide mode coupled apparatus. The input end of an input coupling circuit is connected with an input end matching network circuit sequentially through a first level input coupling microstrip line, a first level input 3dB bridge, a second level input 3dB bridge and a second level input coupling microstrip line; the input end of the input coupling circuit serves as the input end of the multilevel 3dB bridge circuit, the output end of the input end matching network circuit is connected with the grid of a field effect transistor, the drain electrode of the field effect transistor is connected with a first level output coupling microstrip line sequentially through an output end matching network circuit, a second level output coupling microstrip line, a second level output 3dB bridge and a first level output 3dB bridge; and the first level output coupling microstrip line is connected to serve as the output end of the multilevel 3dB bridge circuit. The multilevel 3dB bridge circuit for high-power synthesis stably operates and can be used for manufacturing a high-power microwave module.

Description

technical field [0001] The invention relates to the technical field of waveguide coupling devices, in particular to a 3dB bridge coupling device. Background technique [0002] Microwave power chips can be made based on conductor materials, and microwave power chips are called devices after being packaged. Devices and circuits are combined to make modules. A single device can realize a certain microwave power output, and multiple devices can realize the synthesis of multi-channel microwave power. To realize microwave power synthesis, microwave power synthesis circuits need to be fabricated. At present, microwave power synthesis circuits mainly include: 1) push-pull amplifier circuit; 2) Wilson power divider circuit; 3) single-stage 3dB bridge circuit. For hundreds of watts of power synthesis, the push-pull amplifier circuit and the Wilson power divider circuit work unstable, prone to self-excitation, and easily cause chip burnout. The 3dB bridge circuit has good stability ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/20
Inventor 默江辉马杰李亮杨中月崔玉兴付兴昌蔡树军杨克武
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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