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magnetic random access memory

A random access memory, magnetic technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as complex structure, achieve the effect of simple structure, improved storage density, and improved energy efficiency

Active Publication Date: 2016-06-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above two technologies need to add an additional ferroelectric oxide layer or design a special electric field generating device, which complicates the structure, which brings great challenges to engineering technology.

Method used

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Examples

Experimental program
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Embodiment 1

[0039] Example 1 see Figure 2B The structure of the magnetic element is as follows: first, a bottom electrode layer (or seed layer) 4 of Cr10nm / Au50nm is formed on the substrate; then a 0.7nm thick ferromagnetic Co is formed on the bottom electrode layer 20 Fe 80 Free layer (magnetic free layer 1), and the magnetization direction of this layer can be switched under the action of an electric field; one is formed in ferromagnetic Co 20 Fe 80 The isolation layer (non-magnetic isolation layer 2) above the layer, preferably a 1.5nm MgO barrier layer; another magnetic Fe layer (10nm) formed on the isolation layer 2 and one formed on the other magnetic Fe layer The Au (20nm) top electrode layer (or protective layer) 5 on the (magnetic pinned layer 3). The barrier layer 2 allows charge carriers to tunnel between the magnetic free layer 1 and the magnetic fixed layer 3. The thickness of the magnetic free layer must be less than a certain critical thickness to meet the electric field can...

Embodiment 2

[0042] Embodiment 2 In the foregoing embodiment, the equilibrium magnetization direction of the magnetic pinned layer is determined by the in-plane magnetization of the material, and its direction is relatively fixed. However, when the coercive force is small, the magnetization direction can be reversed under a small external field, thereby affecting the performance of the magnetic memory. In view of the above problems, this embodiment further proposes a pinned magnetic element with a structure such as Figure 3A As shown, an artificial antiferromagnetic layer 6 is formed on the magnetic pinned layer 3, and the equilibrium magnetization direction of the magnetic pinned layer 3 is relatively fixed due to the pinning effect of the antiferromagnetic. The materials of the seed layer 4, the lower magnetic free layer 1, the non-magnetic isolation layer 2, the magnetic pinned layer 3, and the protective layer 5 in this embodiment are similar to those of the first embodiment, so their d...

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Abstract

The invention discloses a magnetic element driven by an electric field and a magnetic random memory. The magnetic element comprises a bottom electrode layer, a first magnetic layer which is formed on the bottom electrode layer, a non-magnetic isolating layer which is formed on the first magnetic layer, a second magnetic layer which is formed on the non-magnetic isolating layer, and a protection layer or a top electrode layer which is formed on the second magnetic layer, wherein the thickness of the first magnetic layer or the second magnetic layer is set to be smaller than critical thickness, so that the magnetization direction of the first magnetic layer or the second magnetic layer can be switched through the electric field which is applied between the protection layer or the top electrode layer and the bottom electrode layer and is perpendicular to the magnetic layers. The magnetic random memory comprises the magnetic element. According to the magnetic element, the magnetization direction of magnetic free layers is converted through voltage or the electric field, so that data can be stored, and necessity in movement of a large number of electrons is eliminated. Therefore, the energy efficiency is greatly improved, and the storage density is remarkably improved. A complicated ferroelectric oxide layer and an additional special design are not adopted, so that the magnetic element is simple in structure.

Description

Technical field [0001] The invention particularly relates to a magnetic element and a magnetic random access memory driven by an electric field, belonging to the technical field of magnetic random access memory. Background technique [0002] Magnetic Random Access Memory (MRAM) is considered to be the next-generation "universal" memory with a wide range of applications due to its advantages of high density, high speed, low power consumption, long life and non-volatility. Its core working unit is a "magnetic fixed layer / isolation layer / magnetic free layer" laminated magnetic element of Sanmingye structure. The current popular MRAM is based on a technology called "spin transfer torque (STT) effect. STT technology uses the STT effect generated by current to change the magnetization direction of the free layer, thereby generating high and low levels in the memory cell. Resistance state, to achieve data access (such as Figure 1A Shown). Although STT technology is superior to other s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15
CPCG11C11/161
Inventor 曾中明方彬张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI