Substrate transfer device and semiconductor manufacturing device using the substrate transfer device
A substrate conveying and substrate technology, used in semiconductor/solid-state device manufacturing, conveyor objects, transportation and packaging, etc., can solve problems such as the inability to maintain the vacuum degree at the specified value, the inability to maintain cleanliness, etc., to improve the degree of design freedom , The effect of preventing scattering
Active Publication Date: 2016-03-30
NISSIN ION EQUIP CO LTD
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Problems solved by technology
[0007] However, when this structure is adopted, the external air may flow into the vacuum chamber from the gap between the wall body and the rod, so that the degree of vacuum cannot be maintained at a specified value.
In addition, since the rod travels between the vacuum chamber maintaining a high vacuum and the atmosphere, dust and the like adhering to the rod in the atmosphere will be scattered from the rod into the vacuum chamber of the ion implantation apparatus, and the vacuum cannot be maintained. Indoor cleanliness issues
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[0051] refer to Figure 1 to Figure 3 A first embodiment of the present invention will be described.
[0052] The ion implantation apparatus 200 of the first embodiment is a type of semiconductor manufacturing apparatus whose interior is kept at a predetermined degree of vacuum, and is an apparatus for adding desired characteristics to, for example, a substrate W for a liquid crystal panel. More specifically, the ion implantation apparatus 200 is used to adjust the characteristics of the semiconductor by irradiating the substrate W with an ion beam to perform ion implantation.
[0053] Such as figure 1 As shown, the ion implantation apparatus 200 includes: an atmospheric transport chamber A, in which the substrate W is picked up by a robot in atmospheric pressure; a substrate transport chamber B, if the substrate W is transported into The substrate delivery chamber B is decompressed from the atmospheric pressure to a specified vacuum degree; the preprocessing chamber C, if t...
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PROBLEM TO BE SOLVED: To provide: a semiconductor transport device that can prevent dust or the like from being scattered in a vacuum chamber by operating rods for moving a substrate transport table, and also facilitates fine adjustment and maintenance; and a semiconductor manufacturing apparatus using the semiconductor transport device.SOLUTION: A substrate transport device includes: a substrate transport table 4; a toggle link mechanism 1; and a plurality of rods 21 that connect between the substrate transport table 4 and the toggle link mechanism 1 by passing through a wall body forming a vacuum chamber 9 or a vacuum spare chamber 8. The toggle link mechanism 1 is configured as follows: The substrate transport table 4 is moved by the rods 21 moved forward and backward by bending and stretching of a toggle link 11, and the substrate transport table 4 is located at a closed position in a state that the toggle link 1 is stretched. The toggle link mechanism 1 includes a seal structure 3 that air-tightly seals a clearance between the rods 21 and the wall body.
Description
technical field [0001] The present invention relates to a substrate transfer device that moves a substrate transfer table provided in a vacuum chamber by a drive mechanism provided outside the vacuum chamber, and a semiconductor manufacturing device using the substrate transfer device. Background technique [0002] For example, in the manufacture of semiconductor substrates used in liquid crystal televisions and the like, in order to impart desired characteristics by ion implantation, an ion implanter, which is a type of semiconductor manufacturing equipment, is used. [0003] In the ion implantation apparatus described above, an ion implantation chamber for irradiating an ion beam to a substrate needs to be kept at a predetermined degree of vacuum. Therefore, in the case of sending the substrate in the atmospheric pressure into the ion implantation chamber, the substrate is first sent into the pre-vacuum chamber, and after the pressure is reduced from the atmospheric pressu...
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IPC IPC(8): H01L21/677H01L21/265
CPCH01L21/67724H01L21/67772H01L21/67775
Inventor 小野田正敏
Owner NISSIN ION EQUIP CO LTD