Device for continuously growing graphene at high temperature

A graphene, high temperature technology, applied in the direction of graphene, gaseous chemical plating, coating, etc., can solve the problems of hindering the development of graphene, unable to achieve continuous and rapid preparation of graphene, and affecting the promotion of graphene.

Active Publication Date: 2013-09-18
CHONGQING GRAPHENE TECH +1
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, due to the limitations of the preparation process, there has been no breakthrough in the methods and equipment for large-scale and continuous preparation of large-area uniform single-layer graphene, which has greatly affected the promotion of graphene application industrialization and hindered the fur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for continuously growing graphene at high temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with drawings and embodiments.

[0024] A device for continuously growing graphene at a high temperature, comprising a sealed cabinet 2 with a vacuum chamber 1 built in, a discharge roller 3 wound with a substrate, a take-up roller 4 for winding the substrate 17 and a built-in vertical The heater 5 of the substrate channel, the discharge roller 3, the receiving roller 4 and the heater 5 are all installed in the vacuum chamber 1, and a vertical reaction device for passing through the substrate is provided in the substrate channel of the heater 5. Chamber 6, an air intake mechanism connected to the vertical reaction chamber 6 is installed on the cabinet 2, and a cooling mechanism 7 for cooling the base 17 is also provided between the heater 5 and the receiving roller 4, and the device also includes There is a vacuum pump unit 8 for evacuating the vacuum chamber 1 . The feeding roller 3 can be arranged t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a device for continuously growing graphene at high temperature. The device comprises a seal cabinet internally provided with a vacuum chamber, a material discharging roller wheel, a material receiving roller wheel for coiling and receiving a foundation base, a heater, an air inlet mechanism and a vacuum pump set, wherein the foundation base is coiled on the material discharging roller wheel; the end of the foundation base penetrates through a vertical high temperature reaction chamber to be connected to the material receiving roller wheel; the vacuum pump set is used for providing vacuum reaction condition for the vertical reaction chamber; the air inlet mechanism is used for providing graphene growth reaction gas for the vertical reaction chamber; and the heater is used for providing temperature condition for the growth of grapheme. The equipment overcomes the problem that the continuous preparation of graphene growth is incompatible to high temperature, enables the growth foundation base to grow the graphene continuously and stably at high temperature, and realizes large-scale preparation of large-area uniform grapheme.

Description

technical field [0001] The invention relates to a device for growing graphene. Background technique [0002] Graphene is a two-dimensional crystal composed of carbon atoms that is only one atomic layer thick. However, due to the unique optical, electrical and mechanical properties of graphene, it has received widespread attention in recent years. The discoverers of graphene, Andre Geim and Konstantin Novoselov, also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. [0003] Graphene is almost completely transparent, absorbing only 2.3% of light across the entire wavelength range. In addition, graphene also has good thermal conductivity and electrical conductivity. Its electron mobility at room temperature exceeds 15,000 cm2 / V s, surpassing carbon nanotubes and silicon crystals, while the resistivity is only about 10-6 Ω cm, which is higher than that of copper or silver. It is the material with the lowest resistivity in the world. Since graphene i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/26C23C16/54C01B31/04C01B32/184
Inventor 李占成史浩飞黄德萍张永娜魏大鹏杜春雷
Owner CHONGQING GRAPHENE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap