Device for continuously growing graphene at high temperature

Abstract

The invention relates to a device for continuously growing graphene at high temperature. The device comprises a seal cabinet internally provided with a vacuum chamber, a material discharging roller wheel, a material receiving roller wheel for coiling and receiving a foundation base, a heater, an air inlet mechanism and a vacuum pump set, wherein the foundation base is coiled on the material discharging roller wheel; the end of the foundation base penetrates through a vertical high temperature reaction chamber to be connected to the material receiving roller wheel; the vacuum pump set is used for providing vacuum reaction condition for the vertical reaction chamber; the air inlet mechanism is used for providing graphene growth reaction gas for the vertical reaction chamber; and the heater is used for providing temperature condition for the growth of grapheme. The equipment overcomes the problem that the continuous preparation of graphene growth is incompatible to high temperature, enables the growth foundation base to grow the graphene continuously and stably at high temperature, and realizes large-scale preparation of large-area uniform grapheme.

Description

technical field [0001] The invention relates to a device for growing graphene. Background technique [0002] Graphene is a two-dimensional crystal composed of carbon atoms that is only one atomic layer thick. However, due to the unique optical, electrical and mechanical properties of graphene, it has received widespread attention in recent years. The discoverers of graphene, Andre Geim and Konstantin Novoselov, also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. [0003] Graphene is almost completely transparent, absorbing only 2.3% of light across the entire wavelength range. In addition, graphene also has good thermal conductivity and electrical conductivity. Its electron mobility at room temperature exceeds 15,000 cm2 / V s, surpassing carbon nanotubes and silicon crystals, while the resistivity is only about 10-6 Ω cm, which is higher than that of copper or silver. It is the material with the lowest resistivity in the world. Since graphene i...

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Problems solved by technology

[0005] However, due to the limitations of the preparation process, there has been no breakthrough in the methods and equipment for large-scale and continuous preparation of large-area uniform single-layer graphene, which has greatly affected the promotion of graphene application industrialization and hindered the further development of graphene.

Although the preparation of single-layer large-area graphene with a diagonal of 30 inches (about 76 cm) can be achieved in experiments, it is still impossible to achieve continuous and rapid preparation of large-area, high-quality graphene due to the limitations of equipment and processes

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