Photolithography device, light transmission unit and photolithography method adopting bipolar exposure method

Abstract

The invention relates to lithographic equipment, a light-transmission unit and a lithographic method employing a dipolar exposure method. The lithographic equipment comprises a light source, a light-transmission unit, a condensing lens, a photomask and a projection lens which are orderly arranged from top to bottom, wherein the light-transmission unit is provided with at least one group of bipolar light holes; a plurality of gray areas are contained inside at least one light hole in the light-transmission unit; the gray difference of the plurality of gray areas is a transitional manner or a jumping manner; a light source ray gathered by the condensing lens focuses diffraction light on a silicon substrate at the lower part through the photomask and the projection lens with the diffraction function. By adopting the lithographic equipment, the synthetic resolution and process windows of lithographic patterns with different sizes are significantly improved; the line width sizes of the lithographic patterns with the different sizes are balanced especially under the condition that the lithographic patterns are arranged in a single direction; meanwhile, the increase of the process cost and the reduction of the output generated by exposure for a plurality of times are avoided.

Description

Technical field [0001] The invention relates to the field of semiconductor microelectronic device manufacturing equipment, and in particular to a photolithography device, a light passing unit and a photolithography method adopting a bipolar exposure mode. Background technique [0002] The production of semiconductor devices usually adopts photolithography exposure to form the required patterns. The basic steps are as follows: first, apply photoresist on the silicon wafer, and then, the strong light passes through a mask engraved with circuit patterns to irradiate the silicon substrate On the bottom, part of the photoresist that was irradiated is deteriorated, then the silicon wafer is cleaned with corrosive liquid to remove the deteriorated photoresist, and the photoresist pattern of the same circuit pattern as the photomask is carved on the silicon substrate. Finally, after Processes such as baking and development to form finished wafers. [0003] During the entire photolithograp...

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Problems solved by technology

[0006] However, the above two pairs of bipolar light-transmitting holes still lack flexibility in balancing the line width size and process window of various patterns, and it is difficult to achieve an optimal process balance for patterns of different sizes

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