Light-emitting diode and manufacture method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., and can solve problems such as the increase in the resistance value of n-type electrodes 17, and achieve the effects of uniform current distribution and uniform light emission

Inactive Publication Date: 2013-09-25
CHI MEI LIGHTING TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the above-mentioned composite metal structure is used as the n-type electrode 17 of the vertical electrode structure, since the n-type electrode 17 of the vertical electrode structure LED1B is located on the nitrogen surface of the gallium nitride material, and the nitrogen surface of the gallium nitride material is in contact with the gallium Due to the different surface characteristics, the ohmic contact characteristics of the n-type electrode 17 will change from the original ohmic contact state to Schott The state of the base contact (schottkey contact), that is, the resistance value of the n-type electrode 17 will increase significantly

Method used

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  • Light-emitting diode and manufacture method thereof
  • Light-emitting diode and manufacture method thereof
  • Light-emitting diode and manufacture method thereof

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Embodiment Construction

[0070] A light-emitting diode element and its manufacturing method according to preferred embodiments of the present invention will be described below with reference to related drawings, wherein the same elements will be described with the same reference symbols.

[0071] It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification for the understanding and reading of those familiar with this technology, and are not used to limit the implementation of the present invention Therefore, it has no technical substantive meaning. Any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of this invention without affecting the effect and purpose of the present invention. The technical content disclosed by the invention must be within the scope covered. At the same time, terms such as "upper", "lower...

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Abstract

The invention discloses a light-emitting diode and a manufacture method thereof. The light-emitting diode comprises a substrate, a first electrode, an epitaxial layer and a second electrode. The first electrode is arranged on one surface of the substrate, the epitaxial layer is arranged on the other surface of the substrate, the second electrode is arranged on the epitaxial layer, the second electrode is a composite metal layer including a Ti layer, a TiW layer, a Pt layer and an Au layer in sequence. The second electrode and the substrate are respectively arranged on two sides of the epitaxial layer. The invention also provides the manufacture method thereof.

Description

technical field [0001] The invention relates to a light emitting diode element and a manufacturing method thereof, in particular to a light emitting diode element having an electrode of a composite metal layer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (LED) is a light-emitting element made of semiconductor materials. Since light-emitting diodes belong to cold light, they have the advantages of low power consumption, long life of components, fast response speed, etc., coupled with the characteristics of small size and easy to make extremely small or array components, so in recent years, with the continuous advancement of technology, Its application scope covers indicator lights of computers or home appliances, backlights of liquid crystal display devices, traffic signs or vehicle lights. [0003] Please also refer to Figure 1A and Figure 1B , are schematic diagrams of LEDs with a horizontal electrode structure and a vertical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/40H01L33/38H01L33/22
Inventor 吴奇隆邱信嘉余国辉蔡松智
Owner CHI MEI LIGHTING TECH
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