Electrode of full-back-contact solar cell and fabrication method of electrode

A solar cell and full back contact technology, applied in the field of solar cells, can solve problems such as current collection and easy grid breakage, and achieve the effects of reducing influence, reducing line resistance loss, and improving performance

Inactive Publication Date: 2013-10-02
SUZHOU RUNYANG PHOTOVOLTAIC TECH
View PDF4 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Third, the long fine grid metal electrode 11 and the fine grid metal electrode 2 12 are prone to broken grids during the manufacturing process, and they only have one end connected to the corresponding main grid metal electrode. The current collected by the electrode of the broken grid part will not be directly collected by the main grid metal electrode
However, due to the increase in the number of main gate electrodes, the resistance loss caused by the electrical shading of the main gate electrodes and the lateral transmission of the region-carrying carriers in the semiconductor substrate will be more obvious.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrode of full-back-contact solar cell and fabrication method of electrode
  • Electrode of full-back-contact solar cell and fabrication method of electrode
  • Electrode of full-back-contact solar cell and fabrication method of electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0038] Embodiment: The embodiment of the present invention discloses a full back contact solar cell electrode, the electrode structure of which is as follows Figure 3-5 Shown:

[0039] Prepare interdigitated alternately arranged p-type doped regions 37 and n-type doped regions 38 on the back of an n-type single crystal silicon substrate with a resistivity of 0.5-20.0 ohm·cm, for example 1.0 ohm·cm;

[0040] Dielectric layer 2 36 is deposited on p-type doped region 37 and n-type doped region 38, and the composition of dielectric layer 2 36 can be silicon nitride, silicon oxide, silicon oxynitride, as silicon nitride, and its thickness is in Between 30 and 300 nanometers, such as 80 nanometers;

[0041] Fine grid metal electrode 1 31, fine grid metal electrode 2 32, main grid electrode 1 33, and main grid electrode 2 34 are deposited on the dielectric layer 2 36; fine grid metal electrode 1 31 and fine grid metal electrode 2 32 form a fork The fingers are arranged alternately...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of solar cells, and provides an electrode of a full-back-contact solar cell and a fabrication method of the electrode. The electrode is characterized in that the electrode comprises first fine grid metal electrodes, second fine grid metal electrodes, first main grid electrodes, second main grid electrodes and first dielectric layers, wherein the first fine grid metal electrodes, the second fine grid metal electrodes, the first main grid electrodes and the second main grid electrodes are positioned on a first main surface of a substrate; the first fine grid metal electrodes and the second fine grid metal electrodes are alternately distributed in an inter-digital shape; the first main grid electrodes and the second main grid electrodes are intersected with the first fine grid metal electrodes and the second fine grid metal electrodes respectively; intersected and overlapped parts between the first main grid electrodes and the second fine grid metal electrodes are isolated from intersected and overlapped parts between second first main grid electrodes and the first fine grid metal electrodes by the dielectric layers; and the first main grid electrodes and the first fine grid metal electrodes are directly contacted with the second main grid electrodes and the second fine grid metal electrodes in intersected and overlapped positions. Compared with the prior art, according to the electrode and the fabrication method, an influence of electrical shading of the electrode is eliminated; line resistance losses of the electrode are reduced; and the performance of a device is improved.

Description

Technical field: [0001] The invention relates to a full-back contact solar cell electrode and a manufacturing method thereof, belonging to the field of solar cells. technical background: [0002] In order to reduce the cost of photovoltaic power generation, it is necessary to continuously improve the conversion efficiency of solar cells. The full back contact solar cell has the following advantages: 1) Using n-type monocrystalline silicon with high bulk life as the substrate material can obtain higher open circuit voltage; Without electrode shielding, higher short-circuit current can be obtained; 3) There is no need to consider the light-receiving surface shielding, and the electrode width can be wider, so that the series resistance can be reduced and a higher fill factor can be obtained. Based on the above advantages, the full back contact solar cell is considered to be a highly efficient solar cell structure with great potential. [0003] The electrodes of the full back ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 陶龙忠杨灼坚其他发明人请求不公开姓名
Owner SUZHOU RUNYANG PHOTOVOLTAIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products