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Method for forming semiconductor device and method for forming fin field effect transistor

A technology of semiconductors and devices, which is applied in the field of semiconductor manufacturing, can solve problems such as device performance problems, and achieve the effect of stable performance and high precision

Active Publication Date: 2013-10-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as the process node is further reduced, there are problems with the device performance of the prior art FinFET

Method used

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  • Method for forming semiconductor device and method for forming fin field effect transistor
  • Method for forming semiconductor device and method for forming fin field effect transistor
  • Method for forming semiconductor device and method for forming fin field effect transistor

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Embodiment Construction

[0048] As mentioned in the background, there are problems with the device performance of the FinFET in the prior art.

[0049] After research, the inventors have found that one of the reasons for the device performance problems of the prior art fin field effect transistors is that the supporting part is formed by using an etching process, the sidewall is formed on the side wall of the supporting part, and then the side wall is formed by the sidewall When the wall is used as a mask to etch the hard mask layer and the semiconductor substrate to form the fin, the side wall of the support part is corroded by the etching gas, and the side wall of the formed support part is uneven, and the side wall is uneven. When the support part is used as a support to form a side wall, the side wall of the formed side wall close to the support part also has unevenness, and when the support part is subsequently removed, the side wall of the side wall close to the support part is still uneven, even...

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PUM

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Abstract

Provided is a method for forming a semiconductor device. The method comprises: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is provided with a supporting portion; forming a flowable layer on the side wall of the supporting portion; removing, after the flowable layer is formed, the supporting portion; and treating the flowable layer, after the supporting portion is removed, for forming a flat flank wall of the side wall. The subsequent process comprises etching the semiconductor substrate by taking the flat flank wall of the side wall as a mask layer. When the fin field effect transistor is formed, the precision of the dimension of a formed fin portion along the direction of the surface of the semiconductor substrate is high, the quality of the fin portion is superior, and the properties of the fin field effect transistor are stable.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device and a method for forming a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology, process nodes are gradually reduced, and gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and the multi-gate device has been obtained as a substitute for the conventional device. Widespread concern. [0003] Fin Field Effect Transistor (Fin FET) is a common multi-gate device, figure 1 A schematic diagram of a three-dimensional structure of a fi...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
Inventor 三重野文健
Owner SEMICON MFG INT (SHANGHAI) CORP
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