Filter device, manufacturing method for filter device, and duplexer
A filter and elastic wave resonator technology, applied in the direction of electrical components, impedance networks, etc., can solve problems such as the difficulty of miniaturization of components
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no. 1 Embodiment approach
[0090] figure 1 It is a block diagram showing the configuration of a duplexer according to an embodiment of the present invention. First, the structure of the duplexer will be described.
[0091] [Diplexer]
[0092] The duplexer 10 of the present embodiment is a device for distributing transmission and reception signals mounted in mobile communication devices such as mobile phones. The duplexer 10 is used in a frequency division (FDD: Frequency Division Duplex) communication system such as UMTS (Universal Mobile Telecommunications System) and CDMA (Code Division Multiple Access), for example.
[0093] The duplexer 10 has a role of distributing transmission and reception signals so that one antenna can also be used for transmission and reception. The properties required for this are as follows.
[0094] (1) There is little leakage of the transmission signal to the reception frequency band or leakage of the reception signal to the transmission frequency band.
[0095] (2) T...
no. 2 Embodiment approach
[0185] Figure 7 It is a schematic cross-sectional view showing the configuration of the transmit-receive filter according to the second embodiment of the present invention. Hereinafter, configurations that are different from those of the first embodiment will be mainly described, and configurations that are the same as those in the above-mentioned embodiment will be given the same reference numerals and their descriptions will be omitted or simplified.
[0186] The transmission / reception filter 201 of this embodiment has a transmission filter 201T, a reception filter 201R, and a support substrate 201s. The transmission filter 201T has an FBAR as the first resonator ER21, and is formed in the first region R1 on the support substrate 201s. The reception filter 201R has a Lamb wave device as a second resonator ER22, and is formed in a second region R2 on the support substrate 201s.
[0187] The first resonator ER21 has a lower electrode layer 231 (first electrode layer), an up...
no. 3 Embodiment approach
[0207] Figure 9 It is a schematic cross-sectional view showing the structure of the transmit-receive filter according to the third embodiment of the present invention. Hereinafter, configurations that are different from those of the first embodiment will be mainly described, and configurations that are the same as those in the above-mentioned embodiment will be given the same reference numerals and their descriptions will be omitted or simplified.
[0208] The transmission / reception filter 301 of this embodiment has a transmission filter 301T, a reception filter 301R, and a support substrate 301s. The transmission filter 301T has an SMR as the first resonator ER31, and is formed in the first region R1 on the support substrate 301s. The reception filter 301R has a Lamb wave device as the second resonator ER32, and is formed in the second region R2 on the support substrate 301s.
[0209] The first resonator ER31 has a lower electrode layer 331 (first electrode layer), an uppe...
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