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Method for treating monocrystalline silicon wafer surface

A single crystal silicon wafer and processing method technology, applied in the directions of post-processing, post-processing details, chemical instruments and methods, etc., can solve problems such as affecting the appearance and efficiency of silicon wafers, whitening, and difficult to remove surface dirt, and achieve the appearance of The effect of good quality, high efficiency and convenient texturing

Inactive Publication Date: 2013-11-06
JILIN QINGDA NEW ENERGY ELECTRIC POWER
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Problems solved by technology

[0002] In the process of texturizing the surface of the silicon wafer, because the silicon wafer is not cleaned in time after cutting or there is cleaning agent on the surface of the silicon wafer, the surrounding surface of the silicon wafer will be air-dried and the surface dirt is difficult to remove. After the texturing, the surface of the silicon wafer is dirty The velvet in the unremoved area will be worse than the normal area, resulting in whitening, which affects the appearance and efficiency of the silicon wafer. Therefore, it is necessary to improve the pretreatment technology on the surface of the silicon wafer to make the surface of the silicon wafer clean and ensure smooth velvet production. conduct

Method used

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  • Method for treating monocrystalline silicon wafer surface
  • Method for treating monocrystalline silicon wafer surface

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Embodiment Construction

[0010] ①. Add 60 liters of pure water with a resistivity of 18 megohm into the acid treatment tank, then add 72 liters of 49% electronic grade (EL grade) hydrofluoric acid (HF) and 6 liters of 70% electronic grade grade (EL grade) nitric acid (HNO 3 ). Make the concentration of hydrofluoric acid (HF) reach 25.6%; nitric acid (HNO 3 ) concentration reaches 3.04%. Mix evenly, control the temperature at room temperature 20-23°C, corrode for 3-10 minutes, and then rinse. After rinsing, enter the alkaline treatment tank for surface treatment again.

[0011] ②. The alkaline treatment tank contains 0.25% sodium hydroxide (NaOH) and 6% hydrogen peroxide (H 2 o 2 ) aqueous solution, the reaction temperature is 65°C, and the reaction time is 180-300 seconds. After rinsing again, the monocrystalline silicon wafer is textured, and the surface of the monocrystalline silicon after texturing is as follows: figure 2 shown.

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Abstract

The invention relates to a method for treating a monocrystalline silicon wafer surface in solar cell production. The method is used for cleaning a monocrystalline silicon wafer surface and is convenient for wafer etching. The method comprises mixed acid treatment and alkaline solution treatment processes. Through the method, the monocrystalline silicon wafer surface is cleaner. The method is convenient for wafer etching and improves wafer appearance effects and efficiency.

Description

technical field [0001] The invention relates to a technology for surface treatment of single crystal silicon wafers in the production of solar cells, in particular to a method for treating the surface of single crystal silicon wafers which can make the surface of the silicon wafers clean and facilitate the texturing of the silicon wafers. Background technique [0002] In the process of texturizing the surface of the silicon wafer, because the silicon wafer is not cleaned in time after cutting or there is cleaning agent on the surface of the silicon wafer, the surrounding surface of the silicon wafer will be air-dried and the surface dirt is difficult to remove. After the texturing, the surface of the silicon wafer is dirty The velvet in the unremoved area will be worse than the normal area, resulting in whitening, which affects the appearance and efficiency of the silicon wafer. Therefore, it is necessary to improve the pretreatment technology on the surface of the silicon w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10
Inventor 刘万学程明辉刘志坚王月王磊孙胜曲爽王长宇
Owner JILIN QINGDA NEW ENERGY ELECTRIC POWER
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