Sensitive Amplifier Circuit

A technology of sensitive amplifiers and comparative amplifier circuits, which is applied in the direction of instruments, static memory, digital memory information, etc., can solve the problems affecting the accuracy of the judgment results of the characteristics of storage units and reference units, and achieve the effect of improving accuracy

Active Publication Date: 2016-03-16
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in fact, it is difficult for the two drain voltages to be completely equal, so that the obtained current is affected by different drain voltages, which affects the accuracy of the judgment results of the characteristics of the memory cell and the reference cell

Method used

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Examples

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Embodiment Construction

[0031] The technical solution of the present invention will be described in more detail below with reference to the drawings and embodiments.

[0032] figure 2 A schematic structural diagram of an embodiment of the sense amplifier circuit provided by the present invention. figure 2 The circuit shown includes a parallel circuit and a comparison amplifier circuit, wherein:

[0033] The parallel circuit includes a first branch and a second branch, wherein:

[0034] The first branch includes:

[0035] a first enable circuit, connected to a high level, and used to control whether the first branch is a pass;

[0036] a first current control circuit, connected to the first enabling circuit, and used to control the magnitude of the current of the first branch;

[0037] a first switch circuit, connected to the drain of the first current control circuit and the reference unit, and used to control the connection state of the first switch circuit and the reference unit;

[0038] In...

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PUM

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Abstract

A provided sensitive amplifier circuit comprises a parallel circuit and a comparison amplification circuit; the parallel circuit comprises a first branch circuit and a second branch circuit; the first branch circuit comprises a first enablement circuit, a first current control circuit, a first switch circuit and a reference cell; the second branch circuit comprises a second enablement circuit, a second current control circuit, a second switch circuit and a storage cell; the current controlled by the first current control circuit and the current controlled by the second current control circuit are equal in intensity; and the comparison amplification circuit is used to compare the voltage at the joint of a comparator and the first switch circuit with the voltage at the joint of the comparator and the second switch circuit, wherein the cell corresponding to the joint with a larger voltage is a programmed cell, and the cell corresponding to the joint with a smaller voltage is an erased cell.

Description

technical field [0001] The invention relates to the field of electronic circuits, in particular to a sensitive amplifier circuit. Background technique [0002] figure 1 It is a structural schematic diagram of a sense amplifier circuit in the prior art. figure 1 Shown is a circuit for distinguishing which of the storage unit and the reference unit in the flash memory is a programmed cell (programmed cell), wherein the circuit is implemented by the following means: [0003] The existing sense amplifier circuit uses a clamp circuit to generate an approximate voltage at the drain of the storage unit and the reference unit. Due to the difference in the characteristics of the storage unit and the reference unit itself, under the same drain voltage condition, the two units Different currents can be generated. By comparing the two currents, it is possible to distinguish who is the programmed cell and who is the erased cell (erased cell) among the memory cell and the reference cel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06
Inventor 程莹
Owner GIGADEVICE SEMICON (BEIJING) INC
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