Magnetron sputtering equipment and magnetron control method

Abstract

The invention provides a magnetron sputtering device and a magnetron control method. The magnetron sputtering device comprises a reaction chamber, a target material, a magnetron, a driving mechanism, a magnetron positioning unit, and a control device. The driving mechanism is connected with the control device, and controls the self rotation speed and the revolution speed of the magnetron according to the control signal of the control device. The magnetron positioning unit is used for determining the initial position of the magnetron. The control device is used for determining the operation cycle of the magnetron according to the initial position, and controls the self rotation speed and the revolution speed of the driving mechanism according to the operation cycle, such that the retention time of the magnetron on unit area of the target material can be controlled on a basis that the frequency of the magnetron passing various positions of the target material is not changed. Therefore, target material etching uniformity can be improved. With the magnetron sputtering device, target material utilization rate can be improved, such that magnetron sputtering device operation cost can be reduced. Also, target material replacement time can be reduced, such that magnetron sputtering device utilization rate can be improved.

Description

technical field [0001] The invention belongs to the technical field of plasma processing, and relates to a magnetron sputtering device and a magnetron control method. Background technique [0002] Magnetron sputtering technology introduces a magnetic field on the surface of the target, uses the magnetic field to confine charged particles, and increases the probability of collision between electrons and process gas, thereby increasing the density of the plasma and improving processing efficiency. Therefore, magnetron sputtering processing equipment is widely used in the production of integrated circuits and thin film solar energy. [0003] figure 1 It is a schematic diagram of a typical magnetron sputtering processing equipment. Such as figure 1 As shown, the magnetron sputtering processing equipment includes a reaction chamber 1 , and an electrostatic chuck 2 for carrying a workpiece to be processed is arranged at the bottom of the reaction chamber 1 . The top of the rea...

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Problems solved by technology

from Figure 9 It can be seen that the corrosion rate near the center of the target is faster, while the corrosion rate near the edge of the target is slower. Moreover, the etch rate at the center and edge of the target is very uneven. The utilization rate of target 3 is measured Only around 53%

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