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Control method of oxygen content in single crystal furnace

A control method and technology of a single crystal furnace, applied in the directions of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve the problems of low conversion efficiency of silicon cells, and achieve the effect of reducing oxygen content and ensuring conversion efficiency.

Inactive Publication Date: 2013-12-04
浙江锦锋光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The higher the oxygen content in silicon, the lower the conversion efficiency of silicon cells

Method used

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Embodiment Construction

[0006] The invention will be further described below in conjunction with specific embodiments. It includes the following steps:

[0007] 1. Vacuum the single crystal furnace;

[0008] 2. Start heating up at a power of 30 kW / h, increase the power of 10 kW / h every 10 minutes, and keep the pressure of argon in the single crystal furnace within the range of 55-65 mTorr until the power reaches 60 kW / h Hour;

[0009] 3. After maintaining the power of 60 kW / h for half an hour, increase the power to 75 kW / h to raise the temperature, and keep the pressure of argon in the single crystal furnace within the range of 55-65 mTorr;

[0010] 4. After maintaining the power of 75 kW / h for half an hour, increase the power to 80-90 kW / h to raise the temperature, and keep the pressure of argon in the single crystal furnace within the range of 55-65 mTorr;

[0011] 5: Keep the power at 80-90 kW / h until the silicon material is melted, and keep the pressure of argon in the single crystal furnace w...

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Abstract

The invention relates to a control method of oxygen content in a single crystal furnace. In the method, a single crystal furnace is vacuated, and heated from a power of 30 kw / h. The power is increased by 10 kw / h every 10 min until the power reaches 60 kw / h and maintained for half an hour. The power is increased to 75kw / h for heating and maintained for half an hour. The power is increased to 80-90 kw / h for heating until silicon materials are melted. In the above processes, the pressure of argon in the single crystal furnace is always maintained at a range of 55-65 millitorrs. The method employs a manner of gradual increase of power for heating. A quartz crucible (silicon dioxide) releases oxygen gradually in the heating processes and the oxygen is carried away by argon with a high flow. Silicon is not easy to adsorb oxygen at a low temperature and at a medium temperature. Thus, the oxygen content of single crystal silicon can be reduced effective effectively, and the transfer efficiency of silicon cell sheets can be ensured.

Description

technical field [0001] The invention relates to a method for controlling the oxygen content in a single crystal furnace. Background technique [0002] The higher the oxygen content in silicon, the lower the conversion efficiency of silicon cells. Therefore, in the Czochralski single crystal production process, it is very important to effectively control the oxygen content in the single crystal. Contents of the invention [0003] The object of the present invention is to provide a method for controlling the oxygen content in a single crystal furnace that can reduce the oxygen content in silicon during the direct single crystal process [0004] The technical scheme adopted by the present invention is: a method for controlling the oxygen content in a single crystal furnace, which is characterized in that it comprises the following steps, A: evacuating the single crystal furnace; B: starting to heat up at a power of 30 kilowatts / hour, Increase the power by 10 kW / h every 10 m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00C30B15/20
Inventor 余思明程佑富
Owner 浙江锦锋光伏科技有限公司