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Photo-curing polysiloxane composition, protecting film and element containing said protecting film

A polysiloxane and composition technology, which is applied to photosensitive materials, optics, and optomechanical equipment for optomechanical equipment, etc., can solve the pattern damage of the hardened film, the poor chemical resistance of the hardened film, and the inability of the hardened film. Immediately carry out cleaning treatment and other problems to achieve the effect of improving chemical resistance and development resistance

Active Publication Date: 2013-12-04
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the sensitivity of the photosensitive resin composition in the above patent in the photolithography process can be accepted by the industry, the cured film formed by it has poor chemical resistance, and when the cleaning process is fully loaded, the cured film will Immediately after the development process, the cleaning process cannot be carried out, resulting in the long-term residual developer on the cured film, which in turn causes the pattern of the cured film to be easily damaged by the developer, making the cured film not resistant to development

Method used

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  • Photo-curing polysiloxane composition, protecting film and element containing said protecting film
  • Photo-curing polysiloxane composition, protecting film and element containing said protecting film
  • Photo-curing polysiloxane composition, protecting film and element containing said protecting film

Examples

Experimental program
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Effect test

preparation example A-1

[0152] In a three-necked flask with a capacity of 500 ml, add 0.30 mole of methyltrimethoxysilane (hereinafter referred to as MTMS), 0.55 mole of phenyltrimethoxysilane (hereinafter referred to as PTMS), 0.10 mole of vinyltrimethoxy Silane (hereinafter referred to as VTMS), 0.05 moles of "GF-20" and 200 grams of propylene glycol monoethyl ether (hereinafter referred to as PGEE), and while stirring at room temperature, add oxalic acid aqueous solution (0.40 grams of oxalic acid / 75 grams of H 2 O). Next, immerse the flask in a 30°C oil bath and stir for 30 minutes, then raise the temperature of the oil bath to 120°C within 30 minutes, and when the internal temperature of the solution reaches 105°C, continue heating and stirring for polycondensation for 6 hours , and then remove the solvent by distillation to obtain a polysiloxane polymer (A-1) having an anhydride group and an alkenyl group.

preparation example A-2

[0154] In a three-necked flask with a volume of 500 ml, add 0.60 mole of MTMS, 0.30 mole of phenyltriethoxysilane (hereinafter referred to as PTES), 0.05 mole of 3-acryloyloxypropyltrimethoxysilane (hereinafter referred to as AAP-TMS for short), 0.04 moles of "TMSOX-D", 0.01 moles of "DMS-S27" and 200 grams of PGEE, and added oxalic acid aqueous solution (0.45 grams of oxalic acid / 75gH 2 O). Next, immerse the flask in a 30°C oil bath and stir for 30 minutes, then raise the temperature of the oil bath to 120°C within 30 minutes, and when the internal temperature of the solution reaches 110°C, continue heating and stirring for polycondensation for 6 hours , and then remove the solvent by distillation to obtain a polysiloxane polymer (A-2) having epoxy groups and alkenyl groups.

preparation example A-3

[0156] In a three-necked flask with a capacity of 500 ml, add 0.60 moles of dimethyldimethoxysilane (hereinafter referred to as DMDMS), 0.30 moles of PTMS, 0.10 moles of 3-methacryloxypropyltrimethoxy Silane (hereinafter referred to as MAPP-TMS), 100 grams of PGEE, and 100 grams of 4-hydroxy-4-methyl-2-pentanone (hereinafter referred to as DAA), and add oxalic acid within 30 minutes while stirring at room temperature Aqueous solution (0.35 g oxalic acid / 75 g H 2 O). Next, immerse the flask in a 30°C oil bath and stir for 30 minutes, then raise the temperature of the oil bath to 120°C within 30 minutes, and when the internal temperature of the solution reaches 105°C, continue heating and stirring for polycondensation for 6 hours , and then remove the solvent by distillation to obtain polysiloxane macromolecule (A-3) with alkenyl groups.

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Abstract

A photo-curing polysiloxane composition for forming a protective film having superior chemical resistance and development resistance is disclosed. The photo-curing polysiloxane composition includes: a polysiloxane component including at least one polysiloxane having at least one alkenyl group; a quinonediazide compound; a fluorene derivative component including at least one fluorene derivative compound having at least one double-bond-containing group; and a solvent.

Description

technical field [0001] The present invention relates to a photocurable polysiloxane composition, in particular to a photocurable polysiloxane composition comprising a polysiloxane component and a fluorene derivative component, whereby the photocurable polysiloxane A protective film formed by an oxane composition, and an element having a protective film. Background technique [0002] In recent years, in the field of integrated circuits for liquid crystal displays or organic electroluminescent displays, the demand for miniaturization of patterns required in the photolithography process has become more and more severe as the size has been reduced. In order to achieve miniaturized patterns, it is generally formed by exposure and development of positive-type photosensitive materials with high resolution and high sensitivity, and positive-type photosensitive materials composed of polysiloxane polymers have gradually become the industry Mainstream used. [0003] Japanese Patent A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G03F7/008G03F7/027G03F7/09
CPCC08K5/101C08K5/42
Inventor 吴明儒施俊安
Owner CHI MEI CORP
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