Single Photon Counting Detector System with Improved Counter Structure
一种检测器系统、单光子计数的技术,应用在辐射的测量、电视系统的零部件、仪器等方向,能够解决统计数据有限等问题
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[0029] figure 1 Schematically shows a doped semiconductor p + , n - , n ++ The structure of the photodetector diode 2 of the intrusion part 4 . The most commonly used material is silicon crystal, but germanium, gallium arsenide or cadmium telluride can also be used.
[0030] Incident photons 6 having energies in the range of 100 eV to several Kev are entering the doped semiconductor p + , n - , n ++ The intrusion part 4 is preceded by a possible covering layer (eg aluminum) 8 and after x-ray absorption a corresponding number of electron-hole pairs 10 are generated according to their energy and the energy required to establish them. In the figure, these numbers of electron-hole pairs are exemplarily shown as three electron-hole pairs 10 divided by the electric field generated by the bias voltage source 12 .
[0031] figure 2A schematic diagram of a two-dimensional pixel detector 14 with a large number of photodetector diodes 2 arranged in an array of n rows and m colum...
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