Filling method of redundant graphs

Abstract

The invention discloses a filling method of redundant graphs. A layout is divided into an empty area and a non-empty area, wherein the empty area is filled through a traditional filling method; regarding the non-empty area, firstly, each side of blank areas of the non-empty area shrinks inwards by a certain distance, graphs of which the shape is the same as that of the blank areas are obtained, the graphs which do not meet the requirements for the size are filtered out, and the residual graphs are used for filling. The filling method divides the layout into the empty area and the non-empty area, the different filling methods are adopted according to the difference of the areas, the filling rate of the redundant graphs and uniformity of the graph density of the whole layout are improved, uniformity of silicon wafers in the chemical mechanical planarization is improved finally, and the manufacturing technique is further improved.

Description

technical field [0001] The invention relates to the field of design and manufacture of integrated circuits, in particular to a method for filling redundant graphics. Background technique [0002] In wafer manufacturing, with the upgrading of process technology, the size of wires and gates is getting smaller and smaller, resulting in higher and higher requirements for the flatness (Non-uniformity) of the wafer surface in lithography technology. . In the production process of semiconductor integrated circuits, chemical mechanical polishing (CMP) is generally used for planarization process. [0003] The chemical mechanical polishing process of the metal layer requires that the metal pattern density on the silicon wafer be as uniform as possible to improve the yield rate of the product. Among them, the traditional method is to fill the empty area of ​​the layout with redundant metal to make the layout pattern density uniform. The traditional redundant pattern filling method is...

AI Technical Summary

Problems solved by technology

Among them, the traditional method is to fill the empty area of ​​the layout with redundant metal to make the layout pattern density uniform. The traditional redundant pattern filling method is to fill with one or more fixed-size rectangles or polygons. This redundant The filling rate of the remaining pattern filling method is generally low or impossible to fill in the narrower open area, which leads to the pattern density or gradient in the local area of ​​the layout not reaching the set target, and finally leads to the uniformity of the silicon wafer after chemical mechanical polishing and etching. sexually affected

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