High-power memristor and control method thereof

Abstract

The invention provides a high-power memristor and a control method thereof. The high-power memristor comprises a controlled voltage source, a controller, a voltage sampling device, a current sampling device and a resistor. The controller generates corresponding control signals according to the input alternating voltages collected by the voltage sampling device and the input currents collected by the current sampling device to regulate the output voltages of the controlled voltage source, and the input voltages and the input currents are made to meet the relation of the voltages and the currents of the memristor. According to the high-power memristor and the control method thereof, due to the fact that an inverter circuit is adopted to achieve the controlled voltage source, the high-power memristor and the control method thereof have the advantages that control signals can be designed according to needs of application occasions, the output voltages of an inverter are controlled by adopting a PWM mode, and memristors of different working performances are achieved; due to the fact that the power capacity of the memristor is determined by the rated power of the inverter circuit, the memristors of different power levels can be achieved by designing the work parameters of the inverter circuit, and reference is provided for the memristors to be put into practical application in various power occasions.

Description

technical field [0001] The invention relates to the technical field of memristors, in particular to a high-power memristor and a control method thereof. Background technique [0002] In 1971, American scientist Cai Shaotang proposed a fourth basic passive circuit element besides resistance, capacitance, and inductance, and named it memristor, but has been unable to manufacture a memristor that meets its physical definition. Until 2008, Hewlett-Packard Company used TiO 2 Thin film materials have successfully fabricated a charge-controlled memristor (see [1]: D.B.Strukov, G.S.Snider, D.R.Stewart, and R.S.Williams, "The missing memristor found", Nature, 2008(453), pp.80–83 ), confirming the existence of memristors. However, HP memristors are made of nano-semiconductor thin-film materials and are very small in size. They are mainly used as computer memory and cannot be applied to electronic circuits. The memristor circuit model built with operational circuits, such as literat...

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Problems solved by technology

However, HP memristors are made of nano-semiconductor thin film materials and are very small in scale. They are mainly used as computer memory and cannot be applied to electronic circuits.

And the memristor circuit model built with operational circuits, such as literature [2] (B. Muthuswamy, "Implementing Memristor based Chaotic Circuits", International Journal of Bifurcation and Chaos, 2010, 20(5), pp.1335–1350) A memristor model using the AD633 multiplier chip is proposed. Its power is limited by the operating voltage of operational circuits such as multipliers and operational amplifiers. It can only be applied to low-power occasions of the milliwatt level, which severely limits the memristor. The application of the device in various power occasions

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